5秒后页面跳转
MG150P12E2 PDF预览

MG150P12E2

更新时间: 2024-09-24 18:09:11
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
13页 1205K
描述
E2

MG150P12E2 数据手册

 浏览型号MG150P12E2的Datasheet PDF文件第2页浏览型号MG150P12E2的Datasheet PDF文件第3页浏览型号MG150P12E2的Datasheet PDF文件第4页浏览型号MG150P12E2的Datasheet PDF文件第5页浏览型号MG150P12E2的Datasheet PDF文件第6页浏览型号MG150P12E2的Datasheet PDF文件第7页 
RoHS  
MG150P12E2  
COMPLIANT  
IGBT Modules  
VCES  
IC  
1200V  
150A  
Applications  
·Motor Drivers  
·AC and DC servo drive amplifier  
·UPS (Uninterruptible Power Supplies)  
Circuit  
Features  
·Low switching losses  
·Low VCE(sat) with positive temperature coefficient  
·Including fast & soft recovery anti-parallel FWD  
·Low inductance case  
·High short circuit capability(10us)  
·Maximum junction temperature 175  
IGBT- inverter  
Absolute Maximum Ratings  
Symbol  
Conditions  
Value  
Unit  
Parameter  
Collector-Emitter Voltage  
Continuous Collector Current  
Repetitive Peak Collector Current  
Gate-Emitter Voltage  
VCES  
IC  
ICRM  
VGES  
VGE=0V, IC=1mA, Tvj=25℃  
TC=100,Tvjmax=175℃  
tp=1ms  
1200  
150  
V
A
A
V
300  
Tvj=25℃  
±20  
TC=25℃  
Total Power Dissipation  
Ptot  
785  
W
Tvjmax=175℃  
S-M334  
www.21yangjie.com  
Rev.1.5, 9-Apr-24  
1

与MG150P12E2相关器件

型号 品牌 获取价格 描述 数据表
MG150Q1BS11 TOSHIBA

获取价格

TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG150Q1JS40 TOSHIBA

获取价格

N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)
MG150Q1JS44 TOSHIBA

获取价格

没有
MG150Q1JS9 TOSHIBA

获取价格

TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG150Q1ZS9 TOSHIBA

获取价格

TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG150Q2YK1 ETC

获取价格

TRANSISTOR MODULES
MG150Q2YL1 ETC

获取价格

TRANSISTOR MODULES
MG150Q2YS11 TOSHIBA

获取价格

TRANSISTOR 150 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
MG150Q2YS40 TOSHIBA

获取价格

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG150Q2YS50 TOSHIBA

获取价格

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)