Datasheet > MG150HF12TFC2

MG150HF12TFC2

更新时间： 2024-09-24 15:19:39

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	1081K
描述
C2

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中文翻译

获取价格

数据手册

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MG150HF12TFC2 数据手册

RoHS

COMPLIANT

MG150HF12TFC2

IGBT Modules

VCES

1200V

150A

Applications

·Motion/sevo control

·High frequency switching application

·UPS (Uninterruptible Power Supplies)

·Welding machine

Circuit

Features

·Low Vce(sat) with Trench technology

·Low switching losses especially Eoff

·Vce(sat) with positive temperature coefficient

·High short circuit capability(10us)

·Including ultra fast & soft recovery anti-parallel FWD

·Low inductance package

·Maximum junction temperature 175℃

 IGBT

Absolute Maximum Ratings

Symbol

Conditions

Value

Unit

Parameter

Collector-Emitter Voltage

Continuous Collector Current

Repetitive Peak Collector Current

Gate-Emitter Voltage

V_CES

I_C

I_CRM

V_GES

V_GE=0V, I_C=1mA, T_vj=25℃

T_c=100℃

1200

150

tp=1ms

300

T_vj=25℃

±20

T_c=25℃

Total Power Dissipation

P_tot

1150

T_vjmax=175℃

S-M428

www.21yangjie.com

Rev.1.2, 8-Apr-22

12 3 4 5 6 7 8

中文翻译

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