Datasheet > MCR12DCNT4G

MCR12DCNT4G

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		电机
页数	文件大小	规格书
5页	563K
描述
该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和速度控制。功能与特色:

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MCR12DCNT4G 技术参数

Thyristors

Surface Mount – 400V - 800V > MCR12DCM, MCR12DCN

MCR12DCM, MCR12DCN

Description

This thyristor is designed primarily for half-wave ac control

applications, such as motor controls, heating controls,

and power supplies; or wherever half−wave, silicon gate−

controlled devices are needed.

Features

• Small Size

• Passivated Die for Reliability and Uniformity

• Low LevelTriggering and Holding Characteristics

• UL Recognized compound meets ﬂammability rating V-0.

• ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

• Pb−Free Packages are Available

Pin Out

Functional Diagram

Additional Information

Samples

Datasheet

Resources

Speciﬁcations are subject to change without notice.

Revised: TK.05/12/23

12 3 4 5

中文翻译

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型号	品牌	替代类型	描述	数据表
S8012DRP	LITTELFUSE	完全替代	Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-252AA,

型号	品牌	获取价格	描述	数据表
MCR12D-DW	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR12DG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DG	LITTELFUSE	获取价格	该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源；或用于需要半波硅门控设
MCR12DSM	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSM	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR12DSM1	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12000mA I(T), 600V V(DRM)
MCR12DSMT4	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSMT4G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR12DSN	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors