MCR12DSN-1

更新时间： 2024-09-15 13:11:23

品牌	Logo	应用领域
安森美 - ONSEMI		栅极
页数	文件大小	规格书
7页	126K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR12DSN-1 数据手册

MCR12DSM, MCR12DSN

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control; CDI (Capacitive Discharge Ignition); and small

engines.

http://onsemi.com

SCRs

12 AMPERES RMS

600 − 800 VOLTS

Features

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• These are Pb−Free Devices

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

DPAK

CASE 369C

STYLE 4

YWW

2DSxG

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

(T = −40 to 110°C, Sine Wave, 50 Hz to

RRM

60 Hz)

MCR12DSM

MCR12DSN

600

800

On−State RMS Current

7.6

100

T(RMS)

(180° Conduction Angles; T = 75°C)

IPAK

CASE 369D

STYLE 4

YWW

2DSxG

Average On−State Current

T(AV)

(180° Conduction Angles; T = 75°C)

Peak Non-Repetitive Surge Current

TSM

(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)

Circuit Fusing Consideration (t = 8.3 msec)

Forward Peak Gate Power

I t

A sec

= Year

= Work Week

5.0

R12DSx = Device Code

x= M or N

(Pulse Width ≤ 10 ꢀ sec, T = 75°C)

Forward Average Gate Power

0.5

2.0

= Pb−Free Package

G(AV)

(t = 8.3 msec, T = 75°C)

Forward Peak Gate Current

(Pulse Width ≤ 10 ꢀ sec, T = 75°C)

PIN ASSIGNMENT

Cathode

Operating Junction Temperature Range

Storage Temperature Range

−40 to 110

−40 to 150

°C

Anode

stg

Gate

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Anode

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

Publication Order Number:

June, 2013 − Rev. 7

MCR12DSM/D

12 3 4 5 6 7

中文翻译

下载PDF

与MCR12DSN-1相关器件

型号	品牌	获取价格	描述	数据表
MCR12DSN-1G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers
MCR12DSNT4	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSNT4G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12L	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LD	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LDG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LM	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LMG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LN	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LNG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors

与MCR12DSN-1相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

6
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

6
SL74HC10N：高性能三输入与非门解析
2024-09-03

84
AIC1781A 电池充电控制器深度解析
2024-09-03

78

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR12DSN-1

MCR12DSN-1 数据手册

与MCR12DSN-1相关器件

与MCR12DSN-1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR12DSN-1

MCR12DSN-1 数据手册

与MCR12DSN-1相关器件

与MCR12DSN-1相关文章

您还可以找

您在本页遇到什么问题？