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MCR12LN

更新时间： 2024-11-24 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 触发装置可控硅整流器
页数 文件大小 规格书
5页 57K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR12LN 技术参数

是否无铅： 含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.12
外壳连接：ANODE配置：SINGLE
关态电压最小值的临界上升速率：100 V/us最大直流栅极触发电流：8 mA
最大直流栅极触发电压：0.8 V最大维持电流：20 mA
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0最大漏电流：2 mA
通态非重复峰值电流：100 A元件数量：1
端子数量：3最大通态电流：12000 A
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大均方根通态电流：12 A
断态重复峰值电压：800 V重复峰值反向电压：800 V
子类别：Silicon Controlled Rectifiers表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：30
触发设备类型：SCRBase Number Matches：1

MCR12LN 数据手册

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MCR12LD, MCR12LM,  
MCR12LN  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half−wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave, silicon gate−controlled devices are needed.  
http://onsemi.com  
SCRs  
12 AMPERES RMS  
400 thru 800 VOLTS  
Features  
• Blocking Voltage to 800 Volts  
• On−State Current Rating of 12 Amperes RMS at 80°C  
• High Surge Current Capability − 100 Amperes  
• Rugged, Economical TO−220AB Package  
• Glass Passivated Junctions for Reliability and Uniformity  
G
A
K
MARKING  
DIAGRAM  
• Minimum and Maximum Values of IGT, VGT and IH Specified for  
Ease of Design  
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C  
• Pb−Free Packages are Available*  
AY WW  
MCR12LxG  
AKA  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
TO−220AB  
CASE 221A−09  
STYLE 3  
1
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
2
3
(T = −40 to 125°C, Sine Wave,  
J
50 to 60 Hz, Gate Open)  
MCR12LD  
MCR12LM  
MCR12LN  
400  
600  
800  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
On-State RMS Current  
(180° Conduction Angles; T = 80°C)  
I
12  
A
A
T(RMS)  
x
= D, M, or N  
C
G
= Pb−Free Package  
Peak Non-repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
I
100  
AKA = Diode Polarity  
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
41  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
5.0  
W
W
A
1
2
3
4
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
Anode  
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
Gate  
(t = 8.3 ms, T = 80°C)  
C
Anode  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 125  
−40 to 150  
°C  
°C  
J
Device  
Package  
Shipping  
T
stg  
MCR12LD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MCR12LDG  
TO−220AB  
(Pb−Free)  
MCR12LM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
MCR12LMG  
TO−220AB  
(Pb−Free)  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings  
of the devices are exceeded.  
MCR12LN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MCR12LNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 2  
MCR12L/D  
 
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中文翻译

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与MCR12LN相关器件

型号 品牌 获取价格 描述 数据表
MCR12LNG ONSEMI

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 		Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12M ONSEMI

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 		Silicon Controlled Rectifiers
MCR12M-AF MOTOROLA

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 		12A, 600V, SCR, TO-220AB
MCR12M-AJ MOTOROLA

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 		12A, 600V, SCR, TO-220AB
MCR12M-AK MOTOROLA

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 		12A, 600V, SCR, TO-220AB
MCR12M-AN MOTOROLA

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 		12A, 600V, SCR, TO-220AB
MCR12M-AS MOTOROLA

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 		Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR12M-BA MOTOROLA

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 		Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR12M-BD MOTOROLA

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 		12A, 600V, SCR, TO-220AB
MCR12M-BG MOTOROLA

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 		12A, 600V, SCR, TO-220AB

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