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MCR12DSNT4

更新时间： 2024-11-04 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
7页 74K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR12DSNT4 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TO-252
包装说明：PLASTIC, CASE 369C, DPAK-3针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.13外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：2 V/us
最大直流栅极触发电流：0.2 mA最大维持电流：6 mA
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
最大漏电流：0.01 mA湿度敏感等级：1
通态非重复峰值电流：100 A元件数量：1
端子数量：2最大通态电流：12000 A
最高工作温度：110 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
认证状态：Not Qualified最大均方根通态电流：12 A
断态重复峰值电压：800 V重复峰值反向电压：800 V
子类别：Silicon Controlled Rectifiers表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
触发设备类型：SCRBase Number Matches：1

MCR12DSNT4 数据手册

 浏览型号MCR12DSNT4的Datasheet PDF文件第2页浏览型号MCR12DSNT4的Datasheet PDF文件第3页浏览型号MCR12DSNT4的Datasheet PDF文件第4页浏览型号MCR12DSNT4的Datasheet PDF文件第5页浏览型号MCR12DSNT4的Datasheet PDF文件第6页浏览型号MCR12DSNT4的Datasheet PDF文件第7页 
MCR12DSM, MCR12DSN  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
SCRs  
12 AMPERES RMS  
600 − 800 VOLTS  
Features  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
G
A
K
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
• Pb−Free Packages are Available  
MARKING  
DIAGRAMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
Rating  
Symbol  
Value  
Unit  
DPAK  
CASE 369C  
STYLE 4  
YWW  
R1  
2DSxG  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
DRM,  
(T = −40 to 110°C, Sine Wave, 50 to 60 Hz,  
2
V
1
J
RRM  
Gate Open)  
MCR12DSM  
MCR12DSN  
3
600  
800  
On−State RMS Current  
(180° Conduction Angles; T = 75°C)  
I
12  
7.6  
100  
A
A
A
T(RMS)  
4
C
DPAK−3  
CASE 369D  
STYLE 4  
YWW  
R1  
2DSxG  
Average On−State Current  
(180° Conduction Angles; T = 75°C)  
I
T(AV)  
C
1
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)  
I
TSM  
2
J
3
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
41  
A sec  
Y
WW  
= Year  
= Work Week  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 75°C)  
C
R12DSx = Device Code  
x= M or N  
G
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
(t = 8.3 msec, T = 75°C)  
= Pb−Free Package  
C
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 75°C)  
C
PIN ASSIGNMENT  
Cathode  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 110  
−40 to 150  
°C  
°C  
J
1
T
stg  
2
3
4
Anode  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Gate  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the device are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 4  
MCR12DSM/D  
 
1234567

中文翻译

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MCR12DSNT4 替代型号

型号 品牌 替代类型 描述 数据表
MCR12DSNT4G ONSEMI

完全替代

 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSMT4 ONSEMI

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