MCR12M-BV

更新时间： 2024-11-04 13:11:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅整流器
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MCR12M-BV 数据手册

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by MCR12/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola preferred devices

SCRs

12 AMPERES RMS

400 thru 800

VOLTS

Designed primarily for half–wave ac control applications, such as motor

controls, heating controls, and power supplies; or wherever half–wave, silicon

gate–controlled devices are needed.

•

Blocking Voltage to 800 Volts

On-State Current Rating of 12 Amperes RMS

High Surge Current Capability — 100 Amperes

Industry Standard TO–220AB Package for Ease of Design

Glass Passivated Junctions for Reliability and Uniformity

CASE 221A–06

(TO-220AB)

Style 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Off-State Voltage (1)

Peak Repetitive Reverse Voltage

DRM

RRM

Volts

(T = –40 to 125°C)

MCR12D

MCR12M

MCR12N

400

600

800

On-State RMS Current

(All Conduction Angles)

T(RMS)

Peak Non-repetitive Surge Current

(One Half Cycle, 60 Hz, T = 125°C)

100

TSM

Circuit Fusing Consideration (t = 8.3 ms)

I t

5.0

A sec

Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)

Watts

Average Gate Power (t = 8.3 ms, T = 80°C)

0.5

G(AV)

Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 80°C)

2.0

Operating Junction Temperature Range

Storage Temperature Range

–40 to +125

–40 to +150

°C

stg

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.0

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

(1) andV

260

DRM

foralltypescanbeappliedonacontinuousbasis. Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall

RRM

notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthatthe

voltage ratings of the devices are exceeded.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1995

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与MCR12M-BV相关器件

型号	品牌	获取价格	描述	数据表
MCR12M-DW	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
MCR12MG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12MG	LITTELFUSE	获取价格	该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源；或用于需要半波硅门控设
MCR12N	ONSEMI	获取价格	Silicon Controlled Rectifiers
MCR12N-AF	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR12N-AJ	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR12N-AK	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR12N-AN	MOTOROLA	获取价格	12A, 800V, SCR, TO-220AB
MCR12N-AS	MOTOROLA	获取价格	12A, 800V, SCR, TO-220AB
MCR12N-AU	MOTOROLA	获取价格	12A, 800V, SCR, TO-220AB