MCR12LM

更新时间： 2024-11-04 04:16:23

品牌	Logo	应用领域
安森美 - ONSEMI		可控硅整流器
页数	文件大小	规格书
5页	57K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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数据手册

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MCR12LM 数据手册

MCR12LD, MCR12LM,

MCR12LN

Preferred Device

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed primarily for half−wave ac control applications, such as

motor controls, heating controls, and power supplies; or wherever

half−wave, silicon gate−controlled devices are needed.

http://onsemi.com

SCRs

12 AMPERES RMS

400 thru 800 VOLTS

Features

• Blocking Voltage to 800 Volts

• On−State Current Rating of 12 Amperes RMS at 80°C

• High Surge Current Capability − 100 Amperes

• Rugged, Economical TO−220AB Package

• Glass Passivated Junctions for Reliability and Uniformity

MARKING

DIAGRAM

• Minimum and Maximum Values of IGT, VGT and IH Specified for

Ease of Design

• High Immunity to dv/dt − 100 V/msec Minimum at 125°C

• Pb−Free Packages are Available*

AY WW

MCR12LxG

AKA

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

TO−220AB

CASE 221A−09

STYLE 3

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 125°C, Sine Wave,

50 to 60 Hz, Gate Open)

MCR12LD

MCR12LM

MCR12LN

400

600

800

= Assembly Location

= Year

WW = Work Week

On-State RMS Current

(180° Conduction Angles; T = 80°C)

T(RMS)

= D, M, or N

= Pb−Free Package

Peak Non-repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)

100

AKA = Diode Polarity

TSM

Circuit Fusing Consideration (t = 8.3 ms)

I t

A sec

PIN ASSIGNMENT

Cathode

Forward Peak Gate Power

5.0

(Pulse Width ≤ 1.0 ms, T = 80°C)

Anode

Forward Average Gate Power

0.5

2.0

G(AV)

Gate

(t = 8.3 ms, T = 80°C)

Anode

Forward Peak Gate Current

(Pulse Width ≤ 1.0 ms, T = 80°C)

ORDERING INFORMATION

Operating Junction Temperature Range

Storage Temperature Range

−40 to 125

−40 to 150

°C

Device

Package

Shipping

stg

MCR12LD

TO−220AB

50 Units / Rail

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MCR12LDG

TO−220AB

(Pb−Free)

MCR12LM

TO−220AB

50 Units / Rail

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

MCR12LMG

TO−220AB

(Pb−Free)

apply for zero or negative gate voltage; positive gate voltage shall not be

applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings

of the devices are exceeded.

MCR12LN

TO−220AB

50 Units / Rail

MCR12LNG

TO−220AB

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 2

MCR12L/D

12 3 4 5

中文翻译

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与MCR12LM相关器件

型号	品牌	获取价格	描述	数据表
MCR12LMG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LN	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12LNG	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12M	ONSEMI	获取价格	Silicon Controlled Rectifiers
MCR12M-AF	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
MCR12M-AJ	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
MCR12M-AK	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
MCR12M-AN	MOTOROLA	获取价格	12A, 600V, SCR, TO-220AB
MCR12M-AS	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR12M-BA	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB

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