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MCR12L

更新时间： 2024-11-20 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅整流器
页数 文件大小 规格书
5页 57K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR12L 数据手册

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MCR12LD, MCR12LM,  
MCR12LN  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half−wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave, silicon gate−controlled devices are needed.  
http://onsemi.com  
SCRs  
12 AMPERES RMS  
400 thru 800 VOLTS  
Features  
• Blocking Voltage to 800 Volts  
• On−State Current Rating of 12 Amperes RMS at 80°C  
• High Surge Current Capability − 100 Amperes  
• Rugged, Economical TO−220AB Package  
• Glass Passivated Junctions for Reliability and Uniformity  
G
A
K
MARKING  
DIAGRAM  
• Minimum and Maximum Values of IGT, VGT and IH Specified for  
Ease of Design  
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C  
• Pb−Free Packages are Available*  
AY WW  
MCR12LxG  
AKA  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
TO−220AB  
CASE 221A−09  
STYLE 3  
1
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
2
3
(T = −40 to 125°C, Sine Wave,  
J
50 to 60 Hz, Gate Open)  
MCR12LD  
MCR12LM  
MCR12LN  
400  
600  
800  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
On-State RMS Current  
(180° Conduction Angles; T = 80°C)  
I
12  
A
A
T(RMS)  
x
= D, M, or N  
C
G
= Pb−Free Package  
Peak Non-repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
I
100  
AKA = Diode Polarity  
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
41  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
5.0  
W
W
A
1
2
3
4
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
Anode  
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
Gate  
(t = 8.3 ms, T = 80°C)  
C
Anode  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
C
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 125  
−40 to 150  
°C  
°C  
J
Device  
Package  
Shipping  
T
stg  
MCR12LD  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MCR12LDG  
TO−220AB  
(Pb−Free)  
MCR12LM  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
MCR12LMG  
TO−220AB  
(Pb−Free)  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings  
of the devices are exceeded.  
MCR12LN  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MCR12LNG  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 2  
MCR12L/D  
 
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