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MCR12DG

更新时间： 2024-11-20 12:26:55
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
4页 105K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR12DG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：CASE 221A-09, 3 PIN针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.1
Is Samacsys：N外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：50 V/us
最大直流栅极触发电流：20 mA最大直流栅极触发电压：1 V
最大维持电流：40 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大漏电流：2 mA通态非重复峰值电流：100 A
元件数量：1端子数量：3
最大通态电流：12000 A最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：400 V
重复峰值反向电压：400 V子类别：Silicon Controlled Rectifiers
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：SCR
Base Number Matches：1

MCR12DG 数据手册

 浏览型号MCR12DG的Datasheet PDF文件第2页浏览型号MCR12DG的Datasheet PDF文件第3页浏览型号MCR12DG的Datasheet PDF文件第4页 
MCR12DG, MCR12MG,  
MCR12NG  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave silicon gate−controlled devices are needed.  
http://onsemi.com  
SCRs  
Features  
• Blocking Voltage to 800 Volts  
12 AMPERES RMS  
400 thru 800 VOLTS  
• On−State Current Rating of 12 Amperes RMS at 80°C  
• High Surge Current Capability − 100 Amperes  
• Rugged, Economical TO−220AB Package  
• Glass Passivated Junctions for Reliability and Uniformity  
G
A
K
MARKING  
DIAGRAM  
• Minimum and Maximum Values of IGT, VGT an IH Specified for  
Ease of Design  
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C  
• These are Pb−Free Devices  
AY WW  
MCR12xG  
AKA  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
TO−220  
CASE 221A−09  
STYLE 3  
)
Peak Repetitive Off−State Voltage (Note 1  
J
50 to 60 Hz, Gate Open)  
V
V
DRM,  
RRM  
1
2
(T = −40 to 125°C, Sine Wave,  
V
3
400  
600  
800  
MCR12D  
MCR12M  
MCR12N  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
x
G
= D, M, or N  
= Pb−Free Package  
On-State RMS Current  
I
12  
A
A
T(RMS)  
(180° Conduction Angles; T = 80°C)  
C
AKA = Diode Polarity  
Peak Non-repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
I
100  
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
41  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
1
C
2
3
4
Anode  
Forward Average Gate Power  
P
G(AV)  
0.5  
7.8  
2.0  
(t = 8.3 ms, T = 80°C)  
C
Gate  
Average On-State Current  
(180° Conduction Angles; T = 80°C)  
I
T(AV)  
Anode  
C
Forward Peak Gate Current  
I
A
GM  
(Pulse Width ≤ 1.0 ms, T = 90°C)  
C
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
Device  
Package  
Shipping  
T
stg  
MCR12DG  
TO−220AB  
(Pb−Free)  
50 Units / Rail  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MCR12MG  
MCR12NG  
TO−220AB  
(Pb−Free)  
50 Units / Rail  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings  
of the devices are exceeded.  
TO−220AB  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2012 − Rev. 5  
MCR12/D  
 
1234

中文翻译

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MCR12DG 替代型号

型号 品牌 替代类型 描述 数据表
2N6509G LITTELFUSE

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