5秒后页面跳转
捷配首页

Datasheet > 触发装置 > 可控硅整流器> MCR12DG
MCR12DG PDF预览

MCR12DG

更新时间： 2024-11-04 12:26:55
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
4页 105K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

阅读下载

中文翻译

获取价格

MCR12DG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-220AB
包装说明：CASE 221A-09, 3 PIN针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.1
Is Samacsys：N外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：50 V/us
最大直流栅极触发电流：20 mA最大直流栅极触发电压：1 V
最大维持电流：40 mAJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
最大漏电流：2 mA通态非重复峰值电流：100 A
元件数量：1端子数量：3
最大通态电流：12000 A最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：400 V
重复峰值反向电压：400 V子类别：Silicon Controlled Rectifiers
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：SCR
Base Number Matches：1

MCR12DG 数据手册

 浏览型号MCR12DG的Datasheet PDF文件第2页浏览型号MCR12DG的Datasheet PDF文件第3页浏览型号MCR12DG的Datasheet PDF文件第4页 
MCR12DG, MCR12MG,  
MCR12NG  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed primarily for half-wave ac control applications, such as  
motor controls, heating controls, and power supplies; or wherever  
half−wave silicon gate−controlled devices are needed.  
http://onsemi.com  
SCRs  
Features  
• Blocking Voltage to 800 Volts  
12 AMPERES RMS  
400 thru 800 VOLTS  
• On−State Current Rating of 12 Amperes RMS at 80°C  
• High Surge Current Capability − 100 Amperes  
• Rugged, Economical TO−220AB Package  
• Glass Passivated Junctions for Reliability and Uniformity  
G
A
K
MARKING  
DIAGRAM  
• Minimum and Maximum Values of IGT, VGT an IH Specified for  
Ease of Design  
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C  
• These are Pb−Free Devices  
AY WW  
MCR12xG  
AKA  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
TO−220  
CASE 221A−09  
STYLE 3  
)
Peak Repetitive Off−State Voltage (Note 1  
J
50 to 60 Hz, Gate Open)  
V
V
DRM,  
RRM  
1
2
(T = −40 to 125°C, Sine Wave,  
V
3
400  
600  
800  
MCR12D  
MCR12M  
MCR12N  
A
Y
= Assembly Location  
= Year  
WW = Work Week  
x
G
= D, M, or N  
= Pb−Free Package  
On-State RMS Current  
I
12  
A
A
T(RMS)  
(180° Conduction Angles; T = 80°C)  
C
AKA = Diode Polarity  
Peak Non-repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
I
100  
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.33 ms)  
I t  
41  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ms, T = 80°C)  
1
C
2
3
4
Anode  
Forward Average Gate Power  
P
G(AV)  
0.5  
7.8  
2.0  
(t = 8.3 ms, T = 80°C)  
C
Gate  
Average On-State Current  
(180° Conduction Angles; T = 80°C)  
I
T(AV)  
Anode  
C
Forward Peak Gate Current  
I
A
GM  
(Pulse Width ≤ 1.0 ms, T = 90°C)  
C
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to +125  
−40 to +150  
°C  
°C  
J
Device  
Package  
Shipping  
T
stg  
MCR12DG  
TO−220AB  
(Pb−Free)  
50 Units / Rail  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MCR12MG  
MCR12NG  
TO−220AB  
(Pb−Free)  
50 Units / Rail  
50 Units / Rail  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for zero or negative gate voltage; positive gate voltage shall not be  
applied concurrent with negative potential on the anode. Blocking voltages  
shall not be tested with a constant current source such that the voltage ratings  
of the devices are exceeded.  
TO−220AB  
(Pb−Free)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
November, 2012 − Rev. 5  
MCR12/D  
 
1234

中文翻译

下载PDF

MCR12DG 替代型号

型号 品牌 替代类型 描述 数据表
2N6509G LITTELFUSE

类似代替

 该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源消弧电路。 功能与特色:

与MCR12DG相关器件

型号 品牌 获取价格 描述 数据表
MCR12DSM ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSM MOTOROLA

获取价格

 		Silicon Controlled Rectifiers
MCR12DSM1 MOTOROLA

获取价格

 		Silicon Controlled Rectifier, 12000mA I(T), 600V V(DRM)
MCR12DSMT4 ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSMT4G ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN MOTOROLA

获取价格

 		Silicon Controlled Rectifiers
MCR12DSN ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN-001 ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN-001G ONSEMI

获取价格

 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN1 MOTOROLA

获取价格

 		Silicon Controlled Rectifier, 12000mA I(T), 800V V(DRM)

与MCR12DG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证