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MCR12DSN

更新时间： 2024-11-03 22:46:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅整流器
页数 文件大小 规格书
6页 132K
描述
Silicon Controlled Rectifiers

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中文翻译

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MCR12DSN 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：unknown
HTS代码：8541.30.00.80风险等级：5.66
Is Samacsys：N外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：2 V/us
最大直流栅极触发电流：0.2 mA最大维持电流：6 mA
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
最大漏电流：0.01 mA通态非重复峰值电流：100 A
元件数量：1端子数量：2
最大通态电流：12000 A最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：12 A断态重复峰值电压：800 V
重复峰值反向电压：800 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SCR
Base Number Matches：1

MCR12DSN 数据手册

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Order this document  
by MCR12DSM/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Devices  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer applications  
such as motor control; process control; temperature, light and speed control.  
•
•
•
•
Small Size  
SCRs  
12 AMPERES RMS  
600 thru 800 VOLTS  
Passivated Die for Reliability and Uniformity  
Low Level Triggering and Holding Characteristics  
A
K
Available in Two Package Styles  
Surface Mount Lead Form — Case 369A  
Miniature Plastic Package — Straight Leads — Case 369  
A
G
ORDERING INFORMATION  
•
K
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)  
Shipped in Sleeves — No Suffix, i.e. MCR12DSN  
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,  
i.e. MCR12DSNT4  
G
A
CASE 369A–13  
STYLE 4  
•
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —  
Add “–1” Suffix to Device Number, i.e. MCR12DSN–1  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Off–State Voltage  
Peak Repetitive Reverse Voltage  
V
DRM  
V
RRM  
Volts  
(T = –40 to 110°C, R  
= 1.0 K  
)
MCR12DSM  
MCR12DSN  
600  
800  
J
GK  
On–State RMS Current  
(All Conduction Angles; T = 75°C)  
I
T(RMS)  
Amps  
12  
C
Average On–State Current (All Conduction Angles; T = 75°C)  
I
7.6  
C
T(AV)  
Peak Non–Repetitive Surge Current  
I
TSM  
(One Half Cycle, 60 Hz, T = 110°C)  
100  
41  
J
2
I t  
2
Circuit Fusing Consideration (t = 8.3 msec)  
A sec  
Peak Gate Power  
(Pulse Width ≤ 10 sec, T = 75°C)  
P
GM  
Watts  
5.0  
C
Average Gate Power  
P
G(AV)  
(t = 8.3 msec, T = 75°C)  
0.5  
C
Peak Gate Current (Pulse Width ≤ 10 sec, T = 75°C)  
I
2.0  
Amps  
C
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
THERMAL CHARACTERISTICS  
Characteristic  
T
J
–40 to 110  
–40 to 150  
°C  
T
stg  
Symbol  
Max  
Unit  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
R
2.2  
88  
80  
°C/W  
JC  
JA  
JA  
(2)  
Thermal Resistance — Junction to Ambient  
Maximum Lead Temperature for Soldering Purposes  
(1) V  
(3)  
T
260  
°C  
L
for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or R  
GK  
= 1.0 K ; positive gate voltage shall  
DRM  
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that  
the voltage ratings of the device are exceeded.  
(2) Surface mounted on minimum recommended pad size.  
(3) 1/8″ from case for 10 seconds.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1997  
123456

中文翻译

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