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MCR12DSN

更新时间： 2024-11-24 04:16:23
品牌 Logo 应用领域
安森美 - ONSEMI 栅极
页数 文件大小 规格书
7页 74K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR12DSN 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.67
关态电压最小值的临界上升速率：2 V/us最大直流栅极触发电流：0.2 mA
最大维持电流：6 mA最大漏电流：0.01 mA
通态非重复峰值电流：100 A最大通态电流：12000 A
最高工作温度：110 °C最低工作温度：-40 °C
断态重复峰值电压：800 V子类别：Silicon Controlled Rectifiers
表面贴装：YES触发设备类型：SCR
Base Number Matches：1

MCR12DSN 数据手册

 浏览型号MCR12DSN的Datasheet PDF文件第2页浏览型号MCR12DSN的Datasheet PDF文件第3页浏览型号MCR12DSN的Datasheet PDF文件第4页浏览型号MCR12DSN的Datasheet PDF文件第5页浏览型号MCR12DSN的Datasheet PDF文件第6页浏览型号MCR12DSN的Datasheet PDF文件第7页 
MCR12DSM, MCR12DSN  
Preferred Device  
Sensitive Gate Silicon  
Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
SCRs  
12 AMPERES RMS  
600 − 800 VOLTS  
Features  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
G
A
K
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
• Pb−Free Packages are Available  
MARKING  
DIAGRAMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
Rating  
Symbol  
Value  
Unit  
DPAK  
CASE 369C  
STYLE 4  
YWW  
R1  
2DSxG  
Peak Repetitive Off−State Voltage (Note 1)  
V
V
DRM,  
(T = −40 to 110°C, Sine Wave, 50 to 60 Hz,  
2
V
1
J
RRM  
Gate Open)  
MCR12DSM  
MCR12DSN  
3
600  
800  
On−State RMS Current  
(180° Conduction Angles; T = 75°C)  
I
12  
7.6  
100  
A
A
A
T(RMS)  
4
C
DPAK−3  
CASE 369D  
STYLE 4  
YWW  
R1  
2DSxG  
Average On−State Current  
(180° Conduction Angles; T = 75°C)  
I
T(AV)  
C
1
Peak Non-Repetitive Surge Current  
(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)  
I
TSM  
2
J
3
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
41  
A sec  
Y
WW  
= Year  
= Work Week  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 75°C)  
C
R12DSx = Device Code  
x= M or N  
G
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
(t = 8.3 msec, T = 75°C)  
= Pb−Free Package  
C
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 75°C)  
C
PIN ASSIGNMENT  
Cathode  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 110  
−40 to 150  
°C  
°C  
J
1
T
stg  
2
3
4
Anode  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Gate  
Anode  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
apply for zero or negative gate voltage; however, positive gate voltage shall  
not be applied concurrent with negative potential on the anode. Blocking  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the device are exceeded.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 4  
MCR12DSM/D  
 
1234567

中文翻译

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