生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.67 |
关态电压最小值的临界上升速率: | 2 V/us | 最大直流栅极触发电流: | 0.2 mA |
最大维持电流: | 6 mA | 最大漏电流: | 0.01 mA |
通态非重复峰值电流: | 100 A | 最大通态电流: | 12000 A |
最高工作温度: | 110 °C | 最低工作温度: | -40 °C |
断态重复峰值电压: | 800 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | YES | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCR12DSN-001 | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
MCR12DSN-001G | ONSEMI |
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Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
MCR12DSN1 | MOTOROLA |
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Silicon Controlled Rectifier, 12000mA I(T), 800V V(DRM) | |
MCR12DSN-1 | ONSEMI |
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暂无描述 | |
MCR12DSN-1G | ONSEMI |
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Sensitive Gate Silicon Controlled Rectifiers | |
MCR12DSNT4 | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
MCR12DSNT4G | ONSEMI |
获取价格 |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
MCR12L | ONSEMI |
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Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
MCR12LD | ONSEMI |
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Silicon Controlled Rectifiers Reverse Blocking Thyristors | |
MCR12LDG | ONSEMI |
获取价格 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors |