MCR12DSM

更新时间： 2024-09-15 04:16:23

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
7页	74K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR12DSM 数据手册

MCR12DSM, MCR12DSN

Preferred Device

Sensitive Gate Silicon

Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

http://onsemi.com

SCRs

12 AMPERES RMS

600 − 800 VOLTS

Features

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

• Pb−Free Packages are Available

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

DPAK

CASE 369C

STYLE 4

YWW

2DSxG

Peak Repetitive Off−State Voltage (Note 1)

DRM,

(T = −40 to 110°C, Sine Wave, 50 to 60 Hz,

RRM

Gate Open)

MCR12DSM

MCR12DSN

600

800

On−State RMS Current

(180° Conduction Angles; T = 75°C)

7.6

100

T(RMS)

DPAK−3

CASE 369D

STYLE 4

YWW

2DSxG

Average On−State Current

(180° Conduction Angles; T = 75°C)

T(AV)

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)

TSM

Circuit Fusing Consideration (t = 8.3 msec)

I t

A sec

= Year

= Work Week

Forward Peak Gate Power

5.0

(Pulse Width ≤ 1.0 ꢀ sec, T = 75°C)

R12DSx = Device Code

x= M or N

Forward Average Gate Power

0.5

2.0

G(AV)

(t = 8.3 msec, T = 75°C)

= Pb−Free Package

Forward Peak Gate Current

(Pulse Width ≤ 1.0 ꢀ sec, T = 75°C)

PIN ASSIGNMENT

Cathode

Operating Junction Temperature Range

Storage Temperature Range

−40 to 110

−40 to 150

°C

stg

Anode

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Gate

Anode

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

November, 2005 − Rev. 4

MCR12DSM/D

12 3 4 5 6 7

中文翻译

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与MCR12DSM相关器件

型号	品牌	获取价格	描述	数据表
MCR12DSM1	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12000mA I(T), 600V V(DRM)
MCR12DSMT4	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSMT4G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR12DSN	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN-001	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN-001G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR12DSN1	MOTOROLA	获取价格	Silicon Controlled Rectifier, 12000mA I(T), 800V V(DRM)
MCR12DSN-1	ONSEMI	获取价格	暂无描述
MCR12DSN-1G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers

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