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MCH3474-TL-H PDF预览

MCH3474-TL-H

更新时间: 2024-09-14 01:20:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 521K
描述
Single N-Channel Power MOSFET

MCH3474-TL-H 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.62JESD-609代码:e6
湿度敏感等级:1端子面层:Tin/Bismuth (Sn/Bi)
Base Number Matches:1

MCH3474-TL-H 数据手册

 浏览型号MCH3474-TL-H的Datasheet PDF文件第2页浏览型号MCH3474-TL-H的Datasheet PDF文件第3页浏览型号MCH3474-TL-H的Datasheet PDF文件第4页浏览型号MCH3474-TL-H的Datasheet PDF文件第5页 
MCH3474  
Power MOSFET  
30V, 50m, 4A, Single N-Channel  
This Power MOSFET is produced using ON Semiconductor’s trench  
technology, which is specifically designed to minimize gate charge and low  
on resistance. This device is suitable for applications with low gate charge  
driving or low on resistance requirements.  
www.onsemi.com  
Features  
V
R
(on) Max  
I
Low On-Resistance  
High Speed Switching  
1.8V drive  
ESD Diode-Protected Gate  
Pb-Free, Halogen Free and RoHS compliance  
DSS  
DS  
D Max  
4A  
50m@ 4.5V  
72m@ 2.5V  
130m@ 1.8V  
30V  
ELECTRICAL CONNECTION  
N-Channel  
Typical Applications  
DC/DC Converter  
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Value  
Unit  
V
V
V
30  
12  
4
DSS  
GSS  
V
I
A
D
Drain Current (Pulse)  
I
16  
A
DP  
PW 10μs, duty cycle 1%  
PACKING TYPE : TL  
MARKING  
Power Dissipation  
When mounted on ceramic substrate  
(900mm2  
× 0.8mm)  
P
1
W
D
FF  
Junction Temperature  
Tj  
150  
°C  
°C  
Storage Temperature  
Tstg  
55 to +150  
TL  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction to Ambient  
When mounted on ceramic substrate  
(900mm2  
0.8mm)  
Symbol  
Value  
Unit  
R
θJA  
125  
°C/W  
×
© Semiconductor Components Industries, LLC, 2015  
June 2015 - Rev. 1  
1
Publication Order Number :  
MCH3474/D  

MCH3474-TL-H 替代型号

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