Datasheet > MCH3479_12

MCH3479_12

更新时间： 2024-09-13 12:22:47

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	189K
描述
General-Purpose Switching Device Applications

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中文翻译

获取价格

数据手册

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MCH3479_12 数据手册

MCH3479

Ordering number : ENA1813A

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

MCH3479

Features

•

ON-resistance R (on)1=49m (typ.)

•

1.8V drive

Halogen free compliance

Protection diode in

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±12

3.5

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Storage Temperature

When mounted on ceramic substrate (900mm²0.8mm)

0.9

150

°C

Tch

Tstg

--55 to +150

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: MCPH3

• JEITA, JEDEC

: SC-70, SOT-323

7019A-003

• Minimum Packing Quantity : 3,000 pcs./reel

MCH3479-TL-H

Packing Type : TL

Marking

0.15

2.0

0 to 0.02

Electrical Connection

0.65

0.3

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

http://semicon.sanyo.com/en/network

60612 TKIM/81110PE TK IM TC-00002457

No. A1813-1/7

12 3 4 5 6 7

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与MCH3479_12相关器件

型号	品牌	获取价格	描述	数据表
MCH3479-TL-H	SANYO	获取价格	General-Purpose Switching Device Applications
MCH3479-TL-H	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，20V，3.5A，64mΩ
MCH3479-TL-W	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，20V，3.5A，64mΩ
MCH3481	SANYO	获取价格	Low Votage Drive Switching Device Applications
MCH3481-TL-H	SANYO	获取价格	Low Votage Drive Switching Device Applications
MCH3481-TL-H	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，20V，2A，104mΩ
MCH3481-TL-W	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，20V，2A，104mΩ
MCH3484	SANYO	获取价格	General-Purpose Switching Device Applications
MCH3484	ONSEMI	获取价格	Single N-Channel Power MOSFET
MCH3484_12	SANYO	获取价格	General-Purpose Switching Device Applications