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MCH3486-TL-H PDF预览

MCH3486-TL-H

更新时间: 2024-09-16 01:11:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 346K
描述
Single N-Channel Power MOSFET

MCH3486-TL-H 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.66JESD-609代码:e6
湿度敏感等级:1端子面层:Tin/Bismuth (Sn/Bi)
Base Number Matches:1

MCH3486-TL-H 数据手册

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MCH3486  
Power MOSFET  
www.onsemi.com  
60V, 137m, 2A, Single N-Channel  
Features  
V
R
(on) Max  
I
Max  
2A  
DSS  
D
DS  
137 mΩ@10V  
192 mΩ@4.5V  
217 mΩ@4V  
Low R (on)  
DS  
60V  
4V Drive  
ESD Diode-Protected Gate  
Pb-Free, Halogen Free and RoHS Compliance  
Small Surface Mount Package (MCPH3)  
Electrical Connection  
N-Channel  
Specifications  
3
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Symbol  
Value  
Unit  
V
Drain to Source Voltage  
V
DSS  
60  
20  
2
Gate to Source Voltage  
Drain Current (DC)  
V
V
GSS  
1
I
I
A
D
1:Gate  
Drain Current (Pulse)  
8
A
2:Source  
3:Drain  
DP  
PW10μs, duty cycle1%  
2
Power Dissipation  
When mounted on ceramic substrate  
(900mm2  
×0.8mm)  
P
D
1
W
Junction Temperature  
Tj  
150  
°C  
°C  
Packing Type:TL  
Marking  
Storage Temperature  
Tstg  
55 to +150  
Thermal Resistance Ratings  
FT  
Parameter  
Symbol  
Value  
125  
Unit  
TL  
Junction to Ambient  
R
°C/W  
When mounted on ceramic substrate  
(900mm2  
×0.8mm)  
θJA  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2014  
October 2014 - Rev. 1  
1
Publication Order Number :  
MCH3486/D  

MCH3486-TL-H 替代型号

型号 品牌 替代类型 描述 数据表
MCH3486-TL-W ONSEMI

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