Datasheet > MCH3486-TL-W

MCH3486-TL-W

更新时间： 2024-11-06 01:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	346K
描述
Single N-Channel Power MOSFET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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MCH3486-TL-W 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	not_compliant	Factory Lead Time：	7 weeks
风险等级：	1.51	Base Number Matches：	1

MCH3486-TL-W 数据手册

MCH3486

Power MOSFET

www.onsemi.com

60V, 137mΩ, 2A, Single N-Channel

Features

(on) Max

Max

DSS

137 mΩ@10V

192 mΩ@4.5V

217 mΩ@4V

• Low R (on)

60V

• 4V Drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS Compliance

• Small Surface Mount Package (MCPH3)

Electrical Connection

N-Channel

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

Gate to Source Voltage

Drain Current (DC)

GSS

1:Gate

Drain Current (Pulse)

2:Source

3:Drain

PW≤10μs, duty cycle≤1%

Power Dissipation

When mounted on ceramic substrate

(900mm²

×0.8mm)

Junction Temperature

150

°C

Packing Type:TL

Marking

Storage Temperature

Tstg

−55 to +150

Thermal Resistance Ratings

Parameter

Symbol

Value

125

Unit

Junction to Ambient

°C/W

When mounted on ceramic substrate

(900mm²

×0.8mm)

θJA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

October 2014 - Rev. 1

Publication Order Number :

MCH3486/D

12 3 4 5

中文翻译

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MCH3486-TL-W 替代型号

型号	品牌	替代类型	描述	数据表
MCH3486-TL-H	ONSEMI	功能相似	Single N-Channel Power MOSFET

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