Datasheet > MCH3484

MCH3484

更新时间： 2024-09-16 02:57:23

品牌	Logo	应用领域
安森美 - ONSEMI		光电二极管
页数	文件大小	规格书
5页	133K
描述
Single N-Channel Power MOSFET

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MCH3484 数据手册

MCH3484

Power MOSFET

www.onsemi.com

20V, 40mΩ, 4.5A, Single N-Channel

Electrical Connection

Features

 On-Resistance R (on)1=33m (typ)

 0.9V Drive

N-Channel

 Pb-Free, Halogen Free and RoHS Compliance

 ESD Diode-Protected Gate

Specifications

1 : Gate

2 : Source

3 : Drain

Absolute Maximum Ratings at Ta = 25C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

5

Gate to Source Voltage

Drain Current (DC)

GSS

4.5

Packing Type : TL Marking

Drain Current (Pulse)

PW10s, duty cycle1%

Power Dissipation

When mounted on ceramic substrate

(900mm²0.8mm)

1.0

Junction Temperature

Operating Temperature

Storage Temperature

150

C

Topr

Tstg

5 to +150

55 to +150

Thermal Resistance Ratings

Parameter

Symbol

Value

125

Unit

Junction to Ambient

When mounted on ceramic substrate

C/W

JA

(900mm² 0.8mm)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

January 2015 - Rev. 2

Publication Order Number :

MCH3484/D

12 3 4 5

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