Datasheet > MCH3486

MCH3486

更新时间： 2024-11-06 01:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	346K
描述
Single N-Channel Power MOSFET

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MCH3486 数据手册

MCH3486

Power MOSFET

www.onsemi.com

60V, 137mΩ, 2A, Single N-Channel

Features

(on) Max

Max

DSS

137 mΩ@10V

192 mΩ@4.5V

217 mΩ@4V

• Low R (on)

60V

• 4V Drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS Compliance

• Small Surface Mount Package (MCPH3)

Electrical Connection

N-Channel

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

Gate to Source Voltage

Drain Current (DC)

GSS

1:Gate

Drain Current (Pulse)

2:Source

3:Drain

PW≤10μs, duty cycle≤1%

Power Dissipation

When mounted on ceramic substrate

(900mm²

×0.8mm)

Junction Temperature

150

°C

Packing Type:TL

Marking

Storage Temperature

Tstg

−55 to +150

Thermal Resistance Ratings

Parameter

Symbol

Value

125

Unit

Junction to Ambient

°C/W

When mounted on ceramic substrate

(900mm²

×0.8mm)

θJA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

October 2014 - Rev. 1

Publication Order Number :

MCH3486/D

12 3 4 5

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