Datasheet > MCH3484-TL-H

MCH3484-TL-H

更新时间： 2024-11-06 01:17:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	133K
描述
Single N-Channel Power MOSFET

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中文翻译

获取价格

技术参数
数据手册
替代型号

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MCH3484-TL-H 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	,	针数：	3
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
风险等级：	5.3	配置：	Single
最大漏极电流 (Abs) (ID)：	4.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e6	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1 W	子类别：	FET General Purpose Powers
表面贴装：	YES	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

MCH3484-TL-H 数据手册

MCH3484

Power MOSFET

www.onsemi.com

20V, 40mΩ, 4.5A, Single N-Channel

Electrical Connection

Features

 On-Resistance R (on)1=33m (typ)

 0.9V Drive

N-Channel

 Pb-Free, Halogen Free and RoHS Compliance

 ESD Diode-Protected Gate

Specifications

1 : Gate

2 : Source

3 : Drain

Absolute Maximum Ratings at Ta = 25C

Parameter

Symbol

Value

Unit

Drain to Source Voltage

DSS

5

Gate to Source Voltage

Drain Current (DC)

GSS

4.5

Packing Type : TL Marking

Drain Current (Pulse)

PW10s, duty cycle1%

Power Dissipation

When mounted on ceramic substrate

(900mm²0.8mm)

1.0

Junction Temperature

Operating Temperature

Storage Temperature

150

C

Topr

Tstg

5 to +150

55 to +150

Thermal Resistance Ratings

Parameter

Symbol

Value

125

Unit

Junction to Ambient

When mounted on ceramic substrate

C/W

JA

(900mm² 0.8mm)

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

January 2015 - Rev. 2

Publication Order Number :

MCH3484/D

12 3 4 5

中文翻译

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MCH3484-TL-H 替代型号

型号	品牌	替代类型	描述	数据表
MCH3484-TL-W	ONSEMI	功能相似	Single N-Channel Power MOSFET

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