Datasheet > MCH3481-TL-H

MCH3481-TL-H

更新时间： 2024-11-06 11:12:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	650K
描述
单 N 沟道，功率 MOSFET，20V，2A，104mΩ

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中文翻译

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技术参数
数据手册
替代型号

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MCH3481-TL-H 技术参数

是否无铅：	不含铅	生命周期：	Lifetime Buy
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	1 week	风险等级：	5.31
JESD-609代码：	e6	湿度敏感等级：	1
端子面层：	Tin/Bismuth (Sn/Bi)	Base Number Matches：	1

MCH3481-TL-H 数据手册

MCH3481

Power MOSFET

20V, 104mΩ, 2A, Single N-Channel

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and low

on resistance. This device is suitable for applications with low gate charge

driving or low on resistance requirements.

www.onsemi.com

Features

• Low On-Resistance

• 1.2V drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS compliance

(on) Max

DSS

D Max

104mΩ@ 4.5V

147mΩ@ 2.5V

203mΩ@ 1.8V

540mΩ@ 1.2V

20V

Typical Applications

• Load Switch

ELECTRICAL CONNECTION

N-Channel

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Value

Unit

DSS

GSS

Drain Current (Pulse)

PW ≤ 10μs, duty cycle ≤ 1%

Power Dissipation

When mounted on ceramic substrate

(900mm²

× 0.8mm)

0.8

Junction Temperature

150

°C

PACKING TYPE : TL

MARKING

Storage Temperature

Tstg

−55 to +150

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm²

0.8mm)

Symbol

Value

156.2

Unit

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

θJA

°C/W

June 2015 - Rev. 1

Publication Order Number :

MCH3481/D

12 3 4 5

中文翻译

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MCH3481-TL-H 替代型号

型号	品牌	替代类型	描述	数据表
MCH3481-TL-W	ONSEMI	功能相似	单 N 沟道，功率 MOSFET，20V，2A，104mΩ

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