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MCH3478

更新时间： 2024-11-01 11:06:19
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三洋 - SANYO 开关通用开关
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4页 292K
描述
General-Purpose Switching Device Applications

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中文翻译

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MCH3478 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.16
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：2 A
最大漏极电流 (ID)：2 A最大漏源导通电阻：0.165 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.2 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MCH3478 数据手册

 浏览型号MCH3478的Datasheet PDF文件第2页浏览型号MCH3478的Datasheet PDF文件第3页浏览型号MCH3478的Datasheet PDF文件第4页 
Ordering number : ENA1353  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH3478  
Features  
•
Low ON-resistance.  
•
Ultrahigh speed switching.  
•
1.8V drive.  
•
Halogen free compliance.  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
30  
±12  
2
DSS  
GSS  
V
I
I
I
A
D
Drain Current (PW≤10s)  
Drain Current (Pulse)  
Duty cycle 1%  
2.5  
8
A
≤
D
PW≤10μs, duty cycle 1%  
A
≤
DP  
When mounted on ceramic substrate (900mm2 0.8mm)  
When mounted on ceramic substrate (900mm2 0.8mm), PW=10s  
0.8  
1.2  
150  
W
W
°C  
°C  
×
Allowable Power Dissipation  
P
D
×
Channel Temperature  
Storage Temperature  
Tch  
Tstg  
--55 to +150  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
I
=1mA, V =0V  
D GS  
30  
(BR)DSS  
V
V
V
V
=30V, V =0V  
1
±10  
1.3  
A
A
μ
DSS  
GSS  
DS  
GS  
I
=±8V, V =0V  
DS  
μ
GS  
DS  
DS  
V
(off)  
=10V, I =1mA  
D
0.4  
1.2  
V
GS  
yfs  
Forward Transfer Admittance  
=10V, I =1A  
D
2.0  
S
|
|
Marking : FK  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1353-1/4  
21809PE MS IM TC-00001860  
1234

中文翻译

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MCH3478 替代型号

型号 品牌 替代类型 描述 数据表
MCH3478 ONSEMI

功能相似

 N-Channel Power MOSFET
MCH3478-TL-W ONSEMI

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 N-Channel Power MOSFET

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MCH3479-TL-H ONSEMI

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 		单 N 沟道，功率 MOSFET，20V，3.5A，64mΩ
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