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MCH3478-TL-H PDF预览

MCH3478-TL-H

更新时间: 2024-11-02 01:15:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 285K
描述
N-Channel Power MOSFET

MCH3478-TL-H 数据手册

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Ordering number : ENA1353B  
MCH3478  
N-Channel Power MOSFET  
http://onsemi.com  
Ω
30V, 2A, 165m , Single MCPH3  
Features  
Low ON-resistance  
1.8V drive  
Protection diode in  
Ultrahigh speed switching  
Halogen free compliance  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
30  
DSS  
GSS  
±12  
V
I
I
I
2
A
D
Drain Current (PW10s)  
Drain Current (Pulse)  
Duty cycle 1%  
2.5  
A
D
PW10μs, duty cycle 1%  
8
0.8  
A
DP  
When mounted on ceramic substrate (900mm2 0.8mm)  
W
W
°C  
°C  
×
Allowable Power Dissipation  
P
D
When mounted on ceramic substrate (900mm2 0.8mm), PW=10s  
1.2  
×
Channel Temperature  
Storage Temperature  
Tch  
150  
Tstg  
--55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: MCPH3  
7019A-003  
• JEITA, JEDEC  
: SC-70, SOT-323  
• Minimum Packing Quantity : 3,000 pcs./reel  
MCH3478-TL-H  
MCH3478-TL-W  
0.15  
2.0  
Packing Type : TL  
Marking  
3
FK  
0 to 0.02  
TL  
1
2
0.65  
0.3  
Electrical Connection  
3
1 : Gate  
2 : Source  
3 : Drain  
1
MCPH3  
2
Semiconductor Components Industries, LLC, 2013  
December, 2013  
D1113 TKIM TC-00003076/60612TKIM/21809PE MSIM TC-00001860 No. A1353-1/5  

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