Datasheet > MCH3476-TL-H

MCH3476-TL-H

更新时间： 2024-09-14 11:14:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	605K
描述
单 N 沟道，功率 MOSFET，20V，2A，125mΩ

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中文翻译

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数据手册

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MCH3476-TL-H 数据手册

MCH3476

Power MOSFET

www.onsemi.com

20V, 125mΩ, 2A, Single N-Channel

Features

• Low On-Resistance

• 1.8V Drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS Compliance

(on) Max

DSS

D Max

125mΩ@ 4.5V

190mΩ@ 2.5V

310mΩ@ 1.8V

20V

Specifications

Absolute Maximum Ratings at Ta = 25°C

Electrical Connection

N-Channel

Unit

Parameter

Symbol

Value

Drain to Source Voltage

DSS

Gate to Source Voltage

Drain Current (DC)

GSS

Drain Current (Pulse)

1 : Gate

2 : Source

3 : Drain

PW≤10μs, duty cycle≤1%

Power Dissipation

When mounted on ceramic substrate

(900mm²

× 0.8mm)

0.8

°C

Junction Temperature

Storage Temperature

150

Tstg

−55 to +150

Packing Type : TL

Marking

Thermal Resistance Ratings

Parameter

Symbol

Value

156.2

Unit

Junction to Ambient

°C/W

When mounted on ceramic substrate

(900mm²

× 0.8mm)

θJA

FH : Device Code

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

March 2015 - Rev. 2

Publication Order Number :

MCH3476/D

12 3 4 5

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