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MCH3476-TL-H PDF预览

MCH3476-TL-H

更新时间: 2024-11-02 11:14:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 605K
描述
单 N 沟道,功率 MOSFET,20V,2A,125mΩ

MCH3476-TL-H 数据手册

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MCH3476  
Power MOSFET  
www.onsemi.com  
20V, 125m, 2A, Single N-Channel  
Features  
Low On-Resistance  
1.8V Drive  
ESD Diode-Protected Gate  
Pb-Free, Halogen Free and RoHS Compliance  
V
R
(on) Max  
I
DSS  
DS  
D Max  
2A  
125m@ 4.5V  
190m@ 2.5V  
310m@ 1.8V  
20V  
Specifications  
Absolute Maximum Ratings at Ta = 25°C  
Electrical Connection  
N-Channel  
Unit  
V
Parameter  
Symbol  
Value  
3
Drain to Source Voltage  
V
DSS  
20  
12  
2
Gate to Source Voltage  
Drain Current (DC)  
V
GSS  
V
I
A
D
1
Drain Current (Pulse)  
1 : Gate  
2 : Source  
3 : Drain  
A
I
8
DP  
PW10μs, duty cycle1%  
Power Dissipation  
When mounted on ceramic substrate  
(900mm2  
× 0.8mm)  
P
D
0.8  
W
2
°C  
°C  
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
55 to +150  
Packing Type : TL  
Marking  
Thermal Resistance Ratings  
FH  
Parameter  
Symbol  
Value  
156.2  
Unit  
Junction to Ambient  
TL  
°C/W  
R
When mounted on ceramic substrate  
(900mm2  
× 0.8mm)  
θJA  
FH : Device Code  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
March 2015 - Rev. 2  
1
Publication Order Number :  
MCH3476/D  

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