Datasheet > MCH3475-TL-E

MCH3475-TL-E

更新时间： 2024-09-14 11:14:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	356K
描述
Single N-Channel Power MOSFET 30V,1.8A, 180mΩ

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技术参数
数据手册

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MCH3475-TL-E 技术参数

是否无铅：	不含铅	生命周期：	Active
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	0.88	配置：	Single
最大漏极电流 (Abs) (ID)：	1.8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e6	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.8 W	子类别：	FET General Purpose Powers
表面贴装：	YES	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

MCH3475-TL-E 数据手册

MCH3475

Power MOSFET

www.onsemi.com

30V, 180mΩ, 1.8A, Single N-Channel

Features

• High Speed Switching

• 4V Drive

• Pb-Free and RoHS Compliance

• Halogen Free Compliance : MCH3475-TL-W

(on) Max

DSS

D Max

1.8A

180mΩ@ 10V

330mΩ@ 4V

30V

Electrical Connection

Specifications

Absolute Maximum Ratings at Ta = 25°C

N-Channel

Unit

Parameter

Symbol

Value

Drain to Source Voltage

DSS

Gate to Source Voltage

Drain Current (DC)

GSS

1.8

1 : Gate

2 : Source

3 : Drain

Drain Current (Pulse)

7.2

PW≤10μs, duty cycle≤1%

Power Dissipation

When mounted on ceramic substrate

(900mm²

× 0.8mm)

0.8

°C

Junction Temperature

Storage Temperature

150

Tstg

−55 to +150

Packing Type : TL

Marking

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Thermal Resistance Ratings

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm²

0.8mm)

Symbol

Value

Unit

°C/W

156.2

θJA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

March 2015 - Rev. 3

Publication Order Number :

MCH3475/D

12 3 4 5

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