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MCH3475_12 PDF预览

MCH3475_12

更新时间: 2024-11-01 12:23:51
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
7页 211K
描述
General-Purpose Switching Device Applications

MCH3475_12 数据手册

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Ordering number : ENA1000A  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH3475  
Features  
Ultrahigh speed switching  
4V drive  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
30  
±20  
1.8  
DSS  
GSS  
V
I
I
A
D
Drain Current (Pulse)  
PW10μs, duty cycle 1%  
7.2  
A
DP  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
When mounted on ceramic substrate (900mm2 0.8mm)  
0.8  
W
°C  
°C  
×
D
Tch  
150  
Tstg  
--55 to +150  
This product is designed to “ESD immunity < 200V ”, so please take care when handling.  
*
Machine Model  
*
Product & Package Information  
Package Dimensions  
unit : mm (typ)  
• Package  
: MCPH3  
7019A-003  
• JEITA, JEDEC  
: SC-70, SOT-323  
• Minimum Packing Quantity : 3,000 pcs./reel  
MCH3475-TL-E  
0.15  
2.0  
3
Packing Type : TL  
Marking  
FG  
0 to 0.02  
TL  
1
2
0.65  
0.3  
Electrical Connection  
3
1 : Gate  
2 : Source  
3 : Drain  
1
SANYO : MCPH3  
2
http://semicon.sanyo.com/en/network  
60612TKIM/D1207PE TIIM TC-00001029  
No. A1000-1/7  

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