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MB82DBS02163C-70LWT PDF预览

MB82DBS02163C-70LWT

更新时间: 2024-09-18 04:16:47
品牌 Logo 应用领域
富士通 - FUJITSU 手机
页数 文件大小 规格书
63页 604K
描述
32 M Bit (2 M word】16 bit) Mobile Phone Application Specific Memory

MB82DBS02163C-70LWT 数据手册

 浏览型号MB82DBS02163C-70LWT的Datasheet PDF文件第2页浏览型号MB82DBS02163C-70LWT的Datasheet PDF文件第3页浏览型号MB82DBS02163C-70LWT的Datasheet PDF文件第4页浏览型号MB82DBS02163C-70LWT的Datasheet PDF文件第5页浏览型号MB82DBS02163C-70LWT的Datasheet PDF文件第6页浏览型号MB82DBS02163C-70LWT的Datasheet PDF文件第7页 
FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11429-3E  
MEMORY Mobile FCRAMTM  
CMOS  
32 M Bit (2 M word×16 bit)  
Mobile Phone Application Specific Memory  
MB82DBS02163C-70L  
DESCRIPTION  
The FUJITSU MB82DBS02163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous  
Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.  
MB82DBS02163C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in  
comparison to regular SRAM. The MB82DBS02163C adopts asynchronous page mode and synchronous burst  
mode for fast memory access as user configurable options.  
This MB82DBS02163C is suited for mobile applications such as Cellular Handset and PDA.  
*: FCRAM is a trademark of Fujitsu Limited, Japan  
FEATURES  
• Asynchronous SRAM Interface  
• Fast Access Time : tCE = 70 ns Max  
• 8 words Page Access Capability : tPAA = 20 ns Max  
• Burst Read/Write Access Capability : tAC = 12 ns Max  
• Low Voltage Operating Condition : VDD = +1.65 V to +1.95 V  
• Wide Operating Temperature : TA = -30 °C to +85 °C  
• Byte Control by LB and UB  
• Low-Power Consumption : IDDA1 = 30 mA Max  
IDDS1 = 80 µA Max  
• Various Power Down mode : Sleep  
4 M-bit Partial  
8 M-bit Partial  
• Shipping Form : Wafer/Chip, 71-ball plastic FBGA package  
Copyright© 2005-2006 FUJITSU LIMITED All rights reserved  

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