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MB82DBS02163D-70L PDF预览

MB82DBS02163D-70L

更新时间: 2024-09-18 03:05:15
品牌 Logo 应用领域
富士通 - FUJITSU 手机
页数 文件大小 规格书
57页 577K
描述
32 M Bit (2 M word】16 bit) Mobile Phone Application Specific Memory

MB82DBS02163D-70L 数据手册

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FUJITSU SEMICONDUCTOR  
DATA SHEET  
DS05-11437-3E  
MEMORY Mobile FCRAMTM  
CMOS  
32 M Bit (2 M word×16 bit)  
Mobile Phone Application Specific Memory  
MB82DBS02163D-70L  
DESCRIPTION  
The FUJITSU MB82DBS02163D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous  
Static Random Access Memory (SRAM) interface containing 33,554,432 storages accessible in a 16-bit format.  
MB82DBS02163D is utilized using a FUJITSU advanced FCRAM core technology and improved integration in  
comparison to regular SRAM.  
The MB82DBS02163D adopts the asynchronous page mode and the synchronous burst mode for fast memory  
access as user configurable options.  
This MB82DBS02163D is suited for mobile applications such as Cellular Handset and PDA.  
*: FCRAM is a trademark of Fujitsu Limited, Japan  
FEATURES  
• Asynchronous SRAM Interface  
• Fast Access Time : tCE = 70 ns Max  
• 8 words Page Access Capability : tPAA = 20 ns Max  
• Burst Read/Write Access Capability : tAC = 8 ns Max  
• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V  
• Operating Temperature : TA = − 10 °C to + 70 °C  
• Byte Control by LB and UB  
• Low-Power Consumption : IDDA1 = 30 mA Max  
IDDS1 = 100 µA Max  
• Various Power Down mode : Sleep  
4 M-bit Partial  
8 M-bit Partial  
PRODUCT LINEUP  
Parameter  
Access Time (Max) (tCE, tAA)  
MB82DBS02163D-70L  
70 ns  
8 ns  
CLK Access Time (Max) (tAC)  
Active Current (Max) (IDDA1)  
Standby Current (Max) (IDDS1)  
Power Down Current (Max) (IDDPS)  
RL = 5, 6  
30 mA  
100 µA  
10 µA  
Copyright©2006 FUJITSU LIMITED All rights reserved  

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