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MB82D01181E-60LPBN

更新时间： 2024-09-18 03:54:23

品牌	Logo	应用领域
富士通 - FUJITSU		手机
页数	文件大小	规格书
21页	257K
描述
16 Mbit (1 M word 】 16 bit) Mobile Phone Application Specific Memory

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MB82D01181E-60LPBN 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-11424-4E

MEMORY Mobile FCRAM^TM

CMOS

16 Mbit (1 M word × 16 bit)

Mobile Phone Application Specific Memory

MB82D01181E^-60L

■ DESCRIPTION

MB82D01181E is a Fast Cycle Random Access Memory (FCRAM) with asynchronous Static Random Access

Memory (SRAM) interface containing 16,777,216 storages accessible in a 16-bit format. MB82D01181E is suited

for mobile applications such as Cellular Handset and PDA.

Note: FCRAM is a trademark of Fujitsu Limited, Japan.

■ FEATURES

• Asynchronous SRAM Interface

• 1 M word × 16 bit Organization

• Low-voltage Operating Conditions : V^DD= 2.3 V to 3.5 V

• Wide Operating Temperature

• Read/Write Cycle Time

• Fast Random Access Time

• Active current

: T^A= 0 °C to + 70 °C

: t^RC= t^WC= 70 ns Min

: t^AA= t^CE= 60 ns Max

: I^DDA1= 20 mA Max

• Standby current

: I^DDs1= 100 µA Max (V^DD≤ 3.1 V)

: I^DDP= 10 µA Max

• Power down current

• Byte Control

• Shipping Form

: Wafer/Chip, 48-pin plastic FBGA

12 3 4 5 6 7...21

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型号	品牌	获取价格	描述	数据表
MB82D01181E-60LWT	FUJITSU	获取价格	16 Mbit (1 M word 】 16 bit) Mobile Phone Appl
MB82DBR08163-70	FUJITSU	获取价格	DRAM
MB82DBR08163-70A	FUJITSU	获取价格	DRAM
MB82DBR08163-70L	FUJITSU	获取价格	暂无描述
MB82DBR08163A-70LWT	FUJITSU	获取价格	Pseudo Static RAM, 8MX16, 70ns, CMOS, WAFER
MB82DBS02154E-70L	FUJITSU	获取价格	32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus
MB82DBS02163C	FUJITSU	获取价格	32 M Bit (2 M word】16 bit) Mobile Phone Appli
MB82DBS02163C-70L	FUJITSU	获取价格	32 M Bit (2 M word】16 bit) Mobile Phone Appli
MB82DBS02163C-70LPBT	FUJITSU	获取价格	32 M Bit (2 M word】16 bit) Mobile Phone Appli
MB82DBS02163C-70LWFKT	FUJITSU	获取价格	Pseudo Static RAM, 2MX16, 70ns, CMOS, WAFER