Datasheet > MB82DBR08163-70A

MB82DBR08163-70A

更新时间： 2024-09-18 20:46:43

品牌	Logo	应用领域
富士通 - FUJITSU		动态存储器
页数	文件大小	规格书
1页	13K
描述
DRAM

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中文翻译

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技术参数
数据手册

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MB82DBR08163-70A 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

MB82DBR08163-70A 数据手册

FUJITSU SEMICONDUCTOR

NEW PRODUCTS

NP05-11421-2E

128 Mbit Mobile FCRAM^TM

3.0 V Core & 1.8 V I/O, Burst Mode

MB82DBR08163-70A

(New released)

■ FEATURES

•

Asynchronous SRAM interface

Complies with Common Specifications for Mobile RAM (COSMORAM)

Burst Mode Function (Consecutive Read/Write Operation through Synchronization of System Clocks)

•

8 Words Page Address Access Capability

_____ ______

•

Byte Control with LB, UB pin

Low Power Consumption

Various Power Down Mode

Sleep

16 Mbit Partial

32 Mbit Partial

Chip/Wafer Business

•

In the form of Burst Mode MCP together with Burst Mode Flash Memory will be available.

71pin Plastic FBGA Package for Engineering Sample ONLY

■ PRODUCT OPTIONS

Part Number

MB82DBR08163

70A

Speed Version

Organization

8 M WORD × 16 BIT

−30 °C to +85 °C

2.6 V to 3.1 V

1.65V to 1.95V

66 MHz

Ambient Temperature

Supply Voltage

I/O Supply Voltage

Burst Frequency (Read Latency = 5)

Read/Write Cycle Time (min.)

Clock Access Time (max.)

Random Access Time (max.)

Page Address Access Time (max.)

Active Current (Max.)

70 ns

11 ns

70 ns

20 ns

35 mA

Standby Current (Max.)

300 µA

Power Down Current (Max.)

Sleep

10 µA

December, 2003

1/1

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