Datasheet > KTD1898_15

KTD1898_15

更新时间： 2024-11-02 01:04:11

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描述
NPN Plastic Encapsulated Transistor

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中文翻译

获取价格

数据手册

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KTD1898_15 数据手册

KTD1898

1A , 100V

NPN Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-89

FEATURES

ꢀ

Small Flat Package

General Purpose Application

ꢀ

CLASSIFICATION OF h_FE(1)

Product-Rank

KTD1898-O

70~140

KTD1898-Y

KTD1898-GR

200~400

Range

120~240

Marking

Collector

PACKAGE INFORMATION

Millimeter

REF.

Package

MPQ

Leader Size

Min.

Max.

4.60

4.25

1.60

2.60

Min.

Max.

4.40

3.94

1.40

2.25

0.40

0.58

Base

1.50 TYP

3.00 TYP

SOT-89

7 inch

0.32

0.52

1.50

0.89

1.85

1.20

0.35

0.44

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

100

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Maximum Junction to Ambient

Junction & Storage Temperature

500

P_C

R_θJA

250

°C / W

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

100

Typ.

Max. Unit

Test conditions

I_C=0.1mA, I_E=0

I_C=1mA, I_B=0

I_E=0.1mA, I_C=0

0.1

400

0.4

µA V_CB=80V, I_E=0

µA V_EB=4V, I_C=0

Emitter Cut-Off Current

I_EBO

DC Current Gain

h_FE

V_CE=3V, I_C= 500mA

I_C=500mA, I_B=20mA

Collector-Emitter Saturation voltage

Transition Frequency

V_CE(sat)

f_T

100

MHz V_CE=10V,I_C=50mA,f=100MHz

pF V_CB=10V, I_E=0, f=1MHz

Collector Output Capacitance

C_OB

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Nov-2011 Rev. A

Page 1 of 1

中文翻译

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KTD1898-O	MCC	获取价格	NPN Silicon Power Transistors
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