Datasheet > KTD1898-G

KTD1898-G

更新时间： 2024-11-19 00:58:51

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科信 - KEXIN		/
页数	文件大小	规格书
1页	337K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTD1898-G 数据手册

SMD Type

Transistors

NPN Transistors

KTD1898

1.70 0.1

■ Features

● Small Flat Package

● General Purpose Application

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

100

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

RθJA

250

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

100

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I

E= 0

C= 0

CBO

EBO

^CB= 80 V , I

EB= 4V , I

= 0

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=500 mA, I

=20mA

0.4

=500 mA, I

hFE

^CE= 3V, I

= 500mA

= 0,f=1MHz

= 50mA , f=100MHz

400

Collector output capacitance

Transition frequency

CB= 10V, I

CE= 10V, I

100

MHz

■ Classification of hfe

Type

Range

Marking

KTD1898-O

70-140

KTD1898-Y

120-240

KTD1898-G

200-400

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