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KTD2061O PDF预览

KTD2061O

更新时间: 2024-02-21 16:30:54
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
1页 108K
描述
Transistor

KTD2061O 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220IS, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.42外壳连接:ISOLATED
最大集电极电流 (IC):2 A集电极-发射极最大电压:180 V
配置:SINGLE最小直流电流增益 (hFE):70
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz

KTD2061O 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-220F Plastic-Encapsulate Transistors  
TO – 220F  
KTD2061 TRANSISTOR (NPN)  
1. BASE  
FEATURES  
2. COLLECTOR  
3. EMITTER  
z
z
z
z
High Breakdown Voltage  
High Transition Frequency  
High Current  
Complementary to KTB1369  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
Unit  
200  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
180  
5
V
Collector Current  
2
2
A
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
W
/W  
RθJA  
Tj  
62.5  
150  
Tstg  
Storage Temperature  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
200  
180  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
IC=100µA,IE=0  
IC=10mA,IB=0  
V
IE=10µA,IC=0  
V
VCB=200V,IE=0  
1
1
μA  
μA  
IEBO  
VEB=5V,IC=0  
DC current gain  
hFE  
VCE=10V, IC=400mA  
IC=500mA,IB=50mA  
VCE=5V, IC=500mA  
VCE=10V,IC=400mA  
70  
240  
1
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE  
V
V
1
fT  
100  
MHz  
Transition frequency  
CLASSIFICATION OF hFE  
RANK  
O
Y
RANGE  
70-140  
120-240  
A,Dec,2010  

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