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KTD1898-GR PDF预览

KTD1898-GR

更新时间: 2024-09-27 01:15:19
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
2页 347K
描述
NPN Silicon Power Transistors

KTD1898-GR 数据手册

 浏览型号KTD1898-GR的Datasheet PDF文件第2页 
M C C  
TM  
Micro Commercial Components  
KTD1898-O  
KTD1898-Y  
KTD1898-GR  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
High VCEO, VCEO=80V  
High IC, IC=1.0A(DC)  
NPN Silicon  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
Power Transistors  
·
·
Maximum Ratings  
SOT-89  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Value  
80  
100  
5.0  
1.0  
0.5  
Unit  
V
V
V
A
A
B
K
Collector Current, DC  
PC  
Collector Power Dissipation  
W
RthJA  
TJ  
ThermalResistanceFromJunctionToAmbient  
Junction Temperature  
250  
-55 to +150  
-55 to +150  
OC/W  
OC  
E
OC  
C
TSTG  
Storage Temperature  
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
G
H
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
J
F
OFF CHARACTERISTICS  
VCEO  
VCBO  
VEBO  
ICBO  
IEBO  
hFE  
Collector-Emitter Breakdown Voltage  
(IC=1.0mAdc,IB=0)  
Collector-Base Breakdow n Voltage  
(IC=100uAdc,IE=0)  
Emitter-Base Breakdown Voltage  
(IE=100uAdc,IC=0)  
Collector Cutoff Current  
(VCB=80Vdc,IE=0)  
Emitter Cutoff Current  
(VEB=4.0Vdc, I C=0)  
DC Current gain  
80  
100  
5.0  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
Vdc  
Vdc  
1. BASE  
---  
Vdc  
1
2
3
2. COLLECTOR  
3. EMITTER  
1.0  
1.0  
400  
0.4  
---  
uAdc  
uAdc  
---  
---  
70  
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ  
(VCE=3.0Vdc, IC=0.5Adc)  
ꢈꢀꢇꢆ  
ꢀꢁꢂꢃꢄꢅꢆ  
ꢇꢇꢆ  
ꢁꢋꢌꢄꢅꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢍꢎꢏꢐꢆ  
ꢇꢉꢊꢆ  
ꢇꢀꢁꢆ  
ꢒꢍꢐꢓꢆ  
1.55  
VCE(sat)  
fT  
Collector-Emitter Saturation Voltage  
---  
Vdc  
MHz  
ꢉꢆ  
ꢍꢎꢑꢎꢆ  
ꢒꢍꢔꢕꢆ  
ꢇꢇꢇꢇꢇ  
(I /IB=500mA/20mA)  
C
.061  
ꢇꢇꢇꢇꢇ  
REF.  
ꢂꢆ  
ꢈꢆ  
ꢄꢆ  
ꢙꢆ  
ꢝꢆ  
ꢃꢆ  
ꢞꢆ  
ꢍꢎꢗꢒꢆ  
ꢍꢕꢐꢎꢆ  
ꢍꢕꢓꢘꢆ  
ꢍꢎꢎꢑꢆ  
ꢍꢕꢎꢐꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢎꢗꢆ  
ꢍꢕꢗꢗꢆ  
ꢍꢎꢔꢗꢆ  
ꢍꢕꢐꢓꢆ  
ꢍꢎꢕꢕꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢍꢕꢎꢓꢆ  
ꢍꢕꢘꢎꢆ  
ꢍꢕꢎꢔꢆ  
ꢍꢕꢔꢐꢆ  
ꢐꢍꢓꢎꢆ  
ꢕꢍꢑꢕꢆ  
ꢘꢍꢐꢒꢆ  
ꢐꢍꢕꢕꢆ  
ꢕꢍꢐꢐꢆ  
ꢕꢍꢐꢑꢆ  
ꢕꢍꢐꢑꢆ  
ꢎꢍꢒꢕꢆ  
ꢒꢍ25  
ꢎꢍꢕꢕꢆ  
ꢘꢍꢗꢒꢆ  
ꢚꢚꢚꢚꢚꢆ  
ꢕꢍꢒꢑꢆ  
ꢕꢍꢗꢐꢆ  
ꢕꢍꢒꢎꢆ  
ꢎꢍꢔꢕꢆ  
Transition Frequency  
(VCE=10Vdc, IC=50mAdc,  
f=100MHz)  
---  
100  
ꢌꢛꢜꢆ  
C
ob  
Output Capacitance  
(VCB=10Vdc, IE=0, f=1.0MHz)  
---  
20  
---  
pF  
 ꢆ  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
O
Y
GR  
200-400  
70-140  
ZO  
120-240  
ZY  
ZG  
www.mccsemi.com  
1 of 2  
Revision: A  
2015/10/21  

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