SEMICONDUCTOR
KTD1937
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
HIGH CURRENT SWITCHING APPLICATION.
LAMP SOLENOID DRIVER.
A
C
DIM MILLIMETERS
S
FEATURES
_
10.0+0.3
A
_
15.0+0.3
B
C
E
High hFE : 500 1500(IC=1A).
Low Saturation :VCE(sat)=0.35V(Max.) (IC=5A).
_
2.70 0.3
+
D
E
F
0.76+0.09/-0.05
_
Φ3.2 0.2
+
_
3.0+0.3
_
12.0 0.3
+
G
H
0.5+0.1/-0.05
_
13.6 0.5
+
J
K
L
L
R
_
3.7 0.2
+
L
1.2+0.25/-0.1
1.5+0.25/-0.1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
M
M
N
P
D
D
_
SYMBOL
VCBO
VCEO
VEB0
IC
RATING
UNIT
V
2.54+0.1
_
6.8 0.1
+
_
+
4.5 0.2
Q
R
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
100
_
2.6+0.2
N
N
H
S
0.5 Typ
80
V
7
V
DC
Collector Current
Pulse
10
1. BASE
3
2
1
A
A
2. COLLECTOR
3. EMITTER
ICP
15
IB
Base Current
2
2
Ta=25
Tc=25
Collector Power
Dissipation
TO-220IS
PC
W
40
Tj
Junction Temperature
150
EQUIVALENT CIRCUIT
Tstg
Storage Temperature Range
-55 150
COLLECTOR
BASE
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
SYMBOL
ICBO
IEBO
TEST CONDITION
MIN.
TYP. MAX. UNIT
VCB=80V, IE=0
VEB=7V, IC=0
-
-
10
10
-
A
A
Emitter Cut-off Current
-
-
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VECF
IC=50mA, IB=0
VCE=1V, IC=1A
VCE=1V, IC=5A
IC=5A, IB=0.05A
IC=5A, IB=0.05A
IE=5A, IB=0
Collector-Emitter Breakdown Voltage
80
-
V
500
-
-
1500
-
DC Current Gain
150
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Forward Voltage
Transition Frequency
-
-
-
-
-
-
0.35
1.2
2.7
-
V
V
-
-
V
fT
VCE=5V, IC=1A
VCB=10V, IE=0, f=1MHz
70
160
MHz
pF
Cob
Collector Output Capacitance
-
OUTPUT
ton
tstg
tf
Turn-on Time
-
-
-
0.6
6.0
1.0
-
-
-
20µsec
I
I
B1
INPUT
I
B1
0
Storage Time
Fall Time
Switching Time
S
B2
I
B2
I
=-I =0.05A
B2
B1
V
=30V
CC
DUTY CYCLE < 1%
2007. 5. 22
Revision No : 3
1/2