Datasheet > KTD1937_07

KTD1937_07

更新时间： 2024-09-26 11:32:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	465K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KTD1937_07 数据手册

SEMICONDUCTOR

KTD1937

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

HIGH CURRENT SWITCHING APPLICATION.

LAMP SOLENOID DRIVER.

DIM MILLIMETERS

FEATURES

10.0+0.3

15.0+0.3

High h_FE: 500 1500(I_C=1A).

Low Saturation :V_CE(sat)=0.35V(Max.) (I_C=5A).

2.70 0.3

0.76+0.09/-0.05

Φ3.2 0.2

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL

V_CBO

V_CEO

V_EB0

I_C

RATING

UNIT

2.54+0.1

6.8 0.1

4.5 0.2

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

2.6+0.2

0.5 Typ

Collector Current

Pulse

1. BASE

2. COLLECTOR

3. EMITTER

I_CP

I_B

Base Current

Ta=25

Tc=25

Collector Power

Dissipation

TO-220IS

P_C

T_j

Junction Temperature

150

EQUIVALENT CIRCUIT

T_stg

Storage Temperature Range

-55 150

COLLECTOR

BASE

EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

I_EBO

TEST CONDITION

MIN.

TYP. MAX. UNIT

V_CB=80V, I_E=0

V_EB=7V, I_C=0

Emitter Cut-off Current

V_(BR)CEO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_ECF

I_C=50mA, I_B=0

V_CE=1V, I_C=1A

V_CE=1V, I_C=5A

I_C=5A, I_B=0.05A

I_E=5A, I_B=0

Collector-Emitter Breakdown Voltage

500

1500

DC Current Gain

150

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector-Emitter Forward Voltage

Transition Frequency

0.35

1.2

2.7

f_T

V_CE=5V, I_C=1A

V_CB=10V, I_E=0, f=1MHz

160

MHz

C_ob

Collector Output Capacitance

OUTPUT

t_on

t_stg

t_f

Turn-on Time

0.6

6.0

1.0

20µsec

INPUT

Storage Time

Fall Time

Switching Time

=-I =0.05A

=30V

DUTY CYCLE < 1%

2007. 5. 22

Revision No : 3

1/2

中文翻译

下载PDF

与KTD1937_07相关器件

型号	品牌	获取价格	描述	数据表
KTD2005	TYSEMI	获取价格	Low ON resistance 2.5V drive Mounting height 1.1mm Composite type, facilitating high-densi
KTD2005	KEXIN	获取价格	Ultrahigh-Speed Switching Applications
KTD2017	KEXIN	获取价格	N-Channel Silicon MOSFET
KTD2017	TYSEMI	获取价格	Low ON resistance 2.5V drive Mounting height 1.1mm Composite type, facilitating high-densi
KTD2058	KEC	获取价格	EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)
KTD2058	CJ	获取价格	TO-220-3L
KTD2058	FOSHAN	获取价格	TO-220F
KTD2058O	CJ	获取价格	Transistor
KTD2058Y	CJ	获取价格	Transistor
KTD2059	KEC	获取价格	TRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)