Datasheet > KTD1898

KTD1898

更新时间： 2024-11-20 11:32:19

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	499K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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KTD1898 数据手册

KTD198

SOT-89-3L

TRANSISTOR (NPN)

FEATURES

1. BASE

Small Flat Package

2. COLLECTOR

3. EMITTER

General Purpose Application

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

100

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

500

℃/W

℃

R_θJA

T_j

250

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

100

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=0.1mA,I_E=0

I_C=1mA,I_B=0

I_E=0.1mA,I_C=0

V_CB=80V,I_E=0

µA

Emitter cut-off current

I_EBO

V_EB=4V,I_C=0

DC current gain

h_FE

V_CE=3V, I_C=500mA

I_C=500mA,I_B=20mA

V_CB=10V,I_E=0, f=1MHz

400

0.4

Collector-emitter saturation voltage

Collector output capacitance

V_CE(sat)

C_ob

V^CE=10V,I^C=50mA,

f=100MHz

f_T

100

MHz

Transition frequency

CLASSIFICATION OF h_FE

RANK

RANGE

70–140

120–240

200–400

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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