Datasheet > KTD1898_15

KTD1898_15

更新时间： 2024-11-02 01:20:43

品牌	Logo	应用领域
KEC		局域网
页数	文件大小	规格书
3页	402K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTD1898_15 数据手册

SEMICONDUCTOR

KTD1898

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

1W (Mounted on Ceramic Substrate).

Small Flat Package.

Complementary to KTB1260.

DIM MILLIMETERS

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

4.25 MAX

1.50 0.10

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

UNIT

0.40 TYP

1.75 MAX

100

0.75 MIN

0.5+0.10/-0.05

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

-1

I_E

Emitter Current

P_C

500

Collector Power Dissipation

P_C*

SOT-89

T_j

Junction Temperature

150

T_stg

Storage Temperature Range

-55 150

* Mounted on ceramic substrate (250mm²0.8t)

Marking

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX. UNIT

V_CB=80V, I_E=0

I_EBO

V_(BR)CEO

h_FE(Note)

V_CE(sat)

f_T

V_EB=4V, I_C=0

Emitter Cut-off Current

I_C=1mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

V_CE=3V, I_C=500mA

I_C=500mA, I_B=20mA

400

0.4

Collector-Emitter Saturation Voltage

Transition Frequency

MHz

V_CE=10V, I_C=50mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

100

C_ob

Collector Output Capacitance

Note : h_FEClassification O:70 140, Y:120 240, GR:200 400

2003. 7. 3

Revision No : 1

1/3

12 3

中文翻译

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