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KTA1505S PDF预览

KTA1505S

更新时间: 2024-11-18 02:55:39
品牌 Logo 应用领域
科信 - KEXIN 开关光电二极管晶体管
页数 文件大小 规格书
2页 932K
描述
PNP Transistors

KTA1505S 数据手册

 浏览型号KTA1505S的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
KTA1505 (KTA1505S)  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Excellent hFE Linearity  
Comlementary to KTC3876/KTC3876S  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Base Current  
Symbol  
Rating  
-35  
Unit  
V
VCBO  
VCEO  
VEBO  
-30  
-5  
I
C
-500  
-50  
mA  
mW  
I
B
P
C
150  
150  
Collector Power Dissipation  
Junction Temperature  
Tc = 25℃  
T
J
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-35  
-30  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 uAI  
Ic= -1 mAI =0  
= -100 uAI  
CB= -35V , I =0  
EB= -5V , I =0  
E=0  
B
I
E
C=0  
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-0.25  
-1.2  
-1  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-100mA, I  
B
=-10mA  
=-10mA  
V
C
=-100mA, I  
B
V
BE  
V
V
CE= -1V, I  
CE= -1V, I  
C
= -100mA  
= -100mA  
C
70  
25  
40  
400  
DC current gain  
hFE  
O
Y
V
CE= -6V, I  
C= -400mA  
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= -6V, I  
CE= -6V, I  
E
= 0,f=1MHz  
13  
pF  
f
C
= -20mA  
200  
MHz  
Classification of hfe(1)  
Type  
Range  
Marking  
KTA1505-O  
KTA1505-Y  
120-240  
AZY  
KTA1505-G  
200-400  
AZG  
70-140  
AZO  
1
www.kexin.com.cn  

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