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KTA1553T

更新时间: 2024-11-19 22:47:27
品牌 Logo 应用领域
KEC 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
3页 89K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTA1553T 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KTA1553T 数据手册

 浏览型号KTA1553T的Datasheet PDF文件第2页浏览型号KTA1553T的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1553T  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
RELAY DRIVERS, LAMP DRIVERS,  
MOTOR DRIVERS AND STROBES APPLICATION.  
E
B
K
FEATURES  
DIM MILLIMETERS  
Adoption of MBIT Processes.  
High Current Capacitance.  
_
A
B
2.9+0.2  
1.6+0.2/-0.1  
_
C
D
0.70+0.05  
2
1
3
Low Collector-to-Emitter Saturation Voltage.  
Ultrasmall-Sized Package permitting applied sets to be  
made small and slim.  
_
0.4+0.1  
E
F
2.8+0.2/-0.3  
1.9+0.2  
_
G
0.95  
_
H
I
J
K
L
0.16+0.05  
High Allowable Power Dissipation.  
Complementary to KTC3553T.  
0.00-0.10  
0.25+0.25/-0.15  
0.60  
0.55  
I
H
MAXIMUM RATING (Ta=25)  
J
J
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-50  
UNIT  
V
1. EMITTER  
2. BASE  
3. COLLECTOR  
-50  
V
-6  
V
DC  
-5  
Collector Current  
A
TSM  
ICP  
Pulse  
-7  
IB  
Base Current  
-1.2  
0.9  
A
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
W
Marking  
Lot No.  
150  
Tstg  
-55150  
Type Name  
S M  
* Package mounted on a ceramic board (600Ὅᴧ0.8)  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP. MAX. UNIT  
VCB=-40V, IE=0  
-
-
-
-0.1  
A  
A  
V
IEBO  
VEB=-4V, IC=0  
Emitter Cut-off Current  
-
-0.1  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
VCE(sat)  
VBE(sat)  
hFE  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DC Current Gain  
IC=-10A, IE=0  
-50  
-50  
-6  
-
-
-
-
IC=-1mA, IB=0  
-
-
V
IE=-10A, IC=0  
-
V
IC=-2A, IB=-40mA  
IC=-2A, IB=-40mA  
VCE=-2V, IC=-500mA  
VCE=-10V, IC=-500mA  
VCB=-10V, f=1MHz  
-225  
-0.80  
-
-450  
-1.2  
560  
-
mV  
V
-
200  
-
fT  
Transition Frequency  
250  
50  
MHz  
pF  
Cob  
Collector Output Capacitance  
-
-
I
B2  
PW=20µs  
B1  
ton  
tstg  
tf  
Turn-On Time  
-
-
-
39  
225  
25  
-
-
-
I
<
DC 1%  
=
OUTPUT  
INPUT  
R
B
24Ω  
V
R
Swiitching  
Storage Time  
Time  
50Ω  
nS  
100µF  
=5V  
470µF  
V
V
=-12V  
Fall Time  
CC  
BE  
-20I =20I =I =-2.5A  
B1  
C
B2  
2001. 6. 28  
Revision No : 0  
1/3  

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