SEMICONDUCTOR
KTA1572
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat)
High Collector Current Capability : IC and ICP
Higher Efficiency Leading to Less Heat Generation.
.
.
B
D
DIM MILLIMETERS
A
B
C
D
7.20 MAX
5.20 MAX
0.60 MAX
P
2.50 MAX
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
DEPTH:0.2
E
F
1.15 MAX
1.27
C
Q
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
-120
-100
-5
UNIT
V
S
G
H
J
1.70 MAX
0.55 MAX
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
_
14.00+0.50
K
K
L
M
0.35 MIN
_
0.75+0.10
V
F
F
4
25
V
N
O
P
H
H
H
DC
Collector Current
Pulse
-1
1.25
A
Φ1.50
0.10 MAX
E
M
M
ICP
-3
Q
R
S
_
12.50+0.50
IB
Base Current
-300
1
mA
W
L
1.00
1
2
3
H
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
N
N
1. EMITTER
2. COLLECTOR
3. BASE
Tj
150
Tstg
-55 150
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V(BR)CBO
TEST CONDITION
MIN.
TYP.
MAX. UNIT
IC=-100 A
-120
-
-
-
-
V
V
V(BR)CEO
V(BR)EBO
ICBO
IC=-1mA
-100
IE=-100 A
-5
-
-
V
VCB=-80V, IE=0A
VEB=-4V, IC=0A
VCES=-80V, VBE=0V
IC=-250mA, IB=-25mA
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-5V, IC=-1A
VCE=-5V, IC=-1mA
VCE=-5V, IC=-250mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-1A
-
-
-100
-100
-100
-0.12
-0.18
-0.32
-1.1
-1.0
-
nA
nA
nA
IEBO
Emitter Cut-Off Current
-
-
ICES
Collector-Emitter Cut-Off Current
-
-
-
VCE(sat) (1)
VCE(sat) (2)
VCE(sat) (3)
VBE(sat)
VBE
-
Collector-Emitter Saturation Voltage **
-
-
V
-
-
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
-
-
V
V
-
-
hFE(1)
hFE(2)
hFE(3)
hFE(4)
fT
150
150
150
125
100
-
-
-
-
DC Current Gain **
-
450
-
-
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
Transition Frequency
-
-
MHz
pF
Cob
Collector Output Capacitance
** Pulse Width = 300 S, Duty Cycle 2%.
17
-
2010. 6. 4
Revision No : 0
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