5秒后页面跳转
KTA1572 PDF预览

KTA1572

更新时间: 2022-12-19 15:26:17
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 59K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTA1572 数据手册

 浏览型号KTA1572的Datasheet PDF文件第2页浏览型号KTA1572的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1572  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
FEATURE  
Low Collector-Emitter Saturation Voltage VCE(sat)  
High Collector Current Capability : IC and ICP  
Higher Efficiency Leading to Less Heat Generation.  
.
.
B
D
DIM MILLIMETERS  
A
B
C
D
7.20 MAX  
5.20 MAX  
0.60 MAX  
P
2.50 MAX  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
DEPTH:0.2  
E
F
1.15 MAX  
1.27  
C
Q
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-120  
-100  
-5  
UNIT  
V
S
G
H
J
1.70 MAX  
0.55 MAX  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
_
14.00+0.50  
K
K
L
M
0.35 MIN  
_
0.75+0.10  
V
F
F
4
25  
V
N
O
P
H
H
H
DC  
Collector Current  
Pulse  
-1  
1.25  
A
Φ1.50  
0.10 MAX  
E
M
M
ICP  
-3  
Q
R
S
_
12.50+0.50  
IB  
Base Current  
-300  
1
mA  
W
L
1.00  
1
2
3
H
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
N
N
1. EMITTER  
2. COLLECTOR  
3. BASE  
Tj  
150  
Tstg  
-55 150  
TO-92L  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage **  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
SYMBOL  
V(BR)CBO  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
IC=-100 A  
-120  
-
-
-
-
V
V
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=-1mA  
-100  
IE=-100 A  
-5  
-
-
V
VCB=-80V, IE=0A  
VEB=-4V, IC=0A  
VCES=-80V, VBE=0V  
IC=-250mA, IB=-25mA  
IC=-500mA, IB=-50mA  
IC=-1A, IB=-100mA  
IC=-1A, IB=-100mA  
VCE=-5V, IC=-1A  
VCE=-5V, IC=-1mA  
VCE=-5V, IC=-250mA  
VCE=-5V, IC=-500mA  
VCE=-5V, IC=-1A  
-
-
-100  
-100  
-100  
-0.12  
-0.18  
-0.32  
-1.1  
-1.0  
-
nA  
nA  
nA  
IEBO  
Emitter Cut-Off Current  
-
-
ICES  
Collector-Emitter Cut-Off Current  
-
-
-
VCE(sat) (1)  
VCE(sat) (2)  
VCE(sat) (3)  
VBE(sat)  
VBE  
-
Collector-Emitter Saturation Voltage **  
-
-
V
-
-
Base-Emitter Saturation Voltage **  
Base-Emitter Voltag  
-
-
V
V
-
-
hFE(1)  
hFE(2)  
hFE(3)  
hFE(4)  
fT  
150  
150  
150  
125  
100  
-
-
-
-
DC Current Gain **  
-
450  
-
-
VCE=-10V, IC=-50mA, f=100MHz  
VCB=-10V, f=1MHz  
Transition Frequency  
-
-
MHz  
pF  
Cob  
Collector Output Capacitance  
** Pulse Width = 300 S, Duty Cycle 2%.  
17  
-
2010. 6. 4  
Revision No : 0  
1/3  

与KTA1572相关器件

型号 品牌 获取价格 描述 数据表
KTA1658 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
KTA1658 FOSHAN

获取价格

TO-220F
KTA1659 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)
KTA1659_15 KEXIN

获取价格

PNP Transistors
KTA1659A KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE)
KTA1659A CJ

获取价格

TO-220F
KTA1659A_15 KEXIN

获取价格

PNP Transistors
KTA1659AO CJ

获取价格

Transistor
KTA1659A-O KEXIN

获取价格

PNP Transistors
KTA1659AY CJ

获取价格

Transistor