Datasheet > KTA1659-O

KTA1659-O

更新时间： 2022-02-26 12:00:07

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描述
PNP Transistors

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数据手册

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KTA1659-O 数据手册

DIP Type

Transistors

PNP Transistors

KTA1659

Unit: mm

TO-220F

±0.20

2.54

8^±0

±0.20

0.70

φ3.

■ Features

● High Transition Frequency

● Comlementary to KTC4370

±0.20

2.76

1.47max

±0.20

0.50

±0.20

0.80

1. Base

2.54typ

2. Collector

3. Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

-160

-5

Unit

VCBO

VCEO

VEBO

-1.5

-0.15

Collector Power Dissipation

Junction Temperature

Tc = 25℃

℃

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= -100 uA， I =0

Ic= -10 mA，I =0

= -100 uA， I =0

^CB= -160V , I =0

EB= -5V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-160

-5

CBO

EBO

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-500mA, I

=-50mA

-1.5

-1.2

240

C=-500mA, I

hFE

^CE= -5V, I

= -100mA

= 0,f=1MHz

= -100mA

Collector output capacitance

Transition frequency

CB= -10V, I

CE= -10V, I

100

MHz

■ Classification of hfe

Type

KTA1659-O

70-140

KTA1659-Y

120-240

Range

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