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KTA1659-O

更新时间: 2024-11-19 01:11:47
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描述
PNP Transistors

KTA1659-O 数据手册

  
DIP Type  
Transistors  
PNP Transistors  
KTA1659  
Unit: mm  
TO-220F  
±0.20  
±0.20  
±0.20  
20  
.
2.54  
8±0  
1
±0.20  
0.70  
φ3.  
Features  
High Transition Frequency  
Comlementary to KTC4370  
±0.20  
2.76  
1.47max  
±0.20  
0.50  
±0.20  
0.80  
1. Base  
2.54typ  
2.54typ  
2. Collector  
3. Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Base Current  
Symbol  
Rating  
-160  
-160  
-5  
Unit  
V
VCBO  
VCEO  
VEBO  
I
C
-1.5  
A
I
B
-0.15  
20  
Collector Power Dissipation  
Junction Temperature  
Tc = 25℃  
P
C
W
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= -100 uAI =0  
Ic= -10 mAI =0  
= -100 uAI =0  
CB= -160V , I =0  
EB= -5V , I =0  
Min  
Typ  
Max  
Unit  
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
-160  
-160  
-5  
E
V
B
I
E
C
I
CBO  
EBO  
V
V
E
-1  
uA  
V
I
C
-1  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-500mA, I  
B
=-50mA  
=-50mA  
-1.5  
-1.2  
240  
V
C=-500mA, I  
B
hFE  
V
V
V
CE= -5V, I  
C
= -100mA  
= 0,f=1MHz  
= -100mA  
70  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= -10V, I  
CE= -10V, I  
E
30  
pF  
f
C
100  
MHz  
Classification of hfe  
Type  
KTA1659-O  
70-140  
KTA1659-Y  
120-240  
Range  
1
www.kexin.com.cn  

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