Datasheet > KTA1661_15

KTA1661_15

更新时间： 2024-11-19 01:12:11

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	917K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KTA1661_15 数据手册

SMD Type

Transistors

PNP Transistors

KTA1661

1.70 0.1

■ Features

● High Voltage

● High Transition Frequency

● Small Flat Package

● Complementary to KTC4373

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-120

-5

-800

-160

500

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

-120

-5

Ic= -1mA， I

Ic= -10 mA， I

= -1mA， I =0

CB= -120 V , I =0

EB= -5V , I =0

=-500 mA, I =-50mA

= -500 mA, I =- 50mA

E=0

B=0

CBO

EBO

-100

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

-1.2

-1

CE= -5V, I

= -500mA

= -100mA

DC current gain

hFE

240

Collector output capacitance

Transition frequency

CB= -10V, I

E= 0,f=1MHz

^CE= -5V, I = -100mA

120

MHz

■ Classification of hfe

Type

Range

Marking

KTA1661-O

80-160

KTA1661-Y

120-240

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