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KTA1661

更新时间: 2024-11-20 05:41:03
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 51K
描述
Epitaxial Planar PNP Transistor

KTA1661 数据手册

  
SMD Type  
Transistors  
Epitaxial Planar PNP Transistor  
KTA1661  
Features  
High Voltage: VCEO=-120V  
High Transition Frequency:fT=120MHz  
Small Flat Package  
Absolute Maximum Ratings Ta = 25  
Parameter  
Colletor-Base Voltage  
Colletor-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-120  
-120  
-5  
Unit  
V
V
V
-800  
-160  
500  
mA  
mA  
mW  
W
Base Current  
IB  
PC  
Colletor Power Dissipation  
PC*  
Tj  
1
Junction Temperature  
150  
Storage Temperature Range  
Tstg  
-55 to 150  
* mounted on ceramic substrate (250mm2X0.8t)  
Electrical Characteristics Ta = 25  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-100  
-100  
Unit  
nA  
nA  
V
VCB=-120V,IE=0  
IEBO  
VCE=5V,IC=0  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
DC Current Gain  
V(BR)CEO  
B(BR)EBO  
hFE  
IC=-10mA,IB=0  
-120  
-5.0  
80  
IE=-1mA,IC=0  
V
VCE=-5V,IC=-100mA  
IC=-500mA,IB=-50mA  
VCE=-5V,IC=-500mA  
VCE=-5V,IC=-100mA  
VCB=-10V,IE=0,f=1MHz  
240  
-1.0  
-1.0  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(sat)  
VBE  
V
V
Transition Frequency  
fT  
120  
MHz  
pF  
Colletor Output Capacitance  
Cob  
30  
hFE Classification  
Marking  
Rank  
DO  
O
DY  
Y
Type  
80 160  
120 240  
1
www.kexin.com.cn  

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