Datasheet > KTA1663

KTA1663

更新时间： 2024-11-18 12:32:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管 PC
页数	文件大小	规格书
1页	278K
描述
Collector Power Dissipation: PC=500mW

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中文翻译

获取价格

数据手册

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KTA1663 数据手册

SSS

MMM

DDD

TTyyy

ppp

eee

rraan

nnDss

ssii

iiissotdIoCrs

Cerrrr

Product specification

KTA1663

SOT-89

Unit: mm

■Features

● Collector Power Dissipation: PC=500mW

+0.1

4.50_-0.1

1.50_-0.1

+0.1

1.80_-0.1

● Collector Current:IC=-1.5A

+0.1

0.48_-0.1

0.53_-0.1

0.44_-0.1

1. Base

1. Source

1 Base

+0.1

3.00_-0.1

2 C^2.o^Cl^ole^llec^ct^to^orr

2. Drain

3 Emitter

3. Emiitter

3. Gate

■Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Rating

-30

Unit

-30

-5

-1.5

Base Current

-0.3

500

℃

Collector Power Dissipation

PC*

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

* mounted on ceramic substrate (250mm²X 0.8t)

■Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditons

IC=-1mA, IE=0

Min

-30

Typ Max

Unit

Collector-base breakdown voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC=-10mA, IB=0

IE=-1mA, IC=0

-5.0

VCB=-30V, IE=0

-100

320

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

DC Current Gain

hFE

VCE=-2V, IC=-500mA

IC=-1.5A, IB=-0.03A

VCE=-2V, IC=-500mA

VCB=-10V, IE=0, f=1MHz

VCE=-2V, IC=-500mA

100

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

VCE(sat)

VBE

-2.0

-1.0

Collector Output Capacitance

Transition Frequency

Cob

120

MHz

■ hFE Classification

Marking

Rank

Range

100～200

160～320

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

中文翻译

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