Datasheet > KTA1663-Y

KTA1663-Y

更新时间： 2024-11-19 01:04:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1113K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KTA1663-Y 数据手册

SMD Type

Transistors

PNP Transistors

KTA1663

1.70 0.1

■ Features

● 1W (Mounted on Ceramic Substrate)

● Small Flat Package

● Comlementary to KTC4375

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

-30

-5

Collector Current - Continuous

Base Current

-1.5

-0.3

500

Collector Power Dissipation

Junction Temperature

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-30

-5

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -1 mA， I

Ic= -10 mA，I

= -1 mA， I

CB= -30V , I

EB= -5V , I =0

E=0

B=0

C=0

CBO

EBO

E=0

-0.1

-2

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-1.5 A, I

B=-30mA

=-1.5 A, I

B=-30mA

-1.2

-1

CE= -2V, I

= -500mA

DC current gain

C= -500mA

100

320

Collector output capacitance

Transition frequency

CB= -10V, I

E= 0,f=1MHz

^CE= -2V, I = -500mA

120

MHz

■ Classification of hfe

Type

Range

Marking

KTA1663-O

100-200

KTA1663-Y

160-320

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