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KTA1663 PDF预览

KTA1663

更新时间: 2024-11-18 12:36:43
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 138K
描述
TRANSISTOR (PNP)

KTA1663 数据手册

  
RoHS  
KTA1663  
KTA1663  
TRANSISTOR (PNP)  
1
FEATURES  
2
Power dissipation  
PCM:  
Collector current  
ICM:  
3
0.5  
W (Tamb=25)  
SOT-89  
1. BASE  
-1.5  
A
Collector-base voltage  
V(BR)CBO -35  
Operating and storage junction temperature range  
2. COLLECTOR (HEAT SINK)  
3. EMITTER  
:
V
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-1mA, IE=0  
MIN  
-35  
-30  
-5  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= -10mA , IB=0  
V
IE=-1mA, IC=0  
V
VCB=-30V, IE=0  
-0.1  
-0.1  
320  
-2.0  
-1.0  
µA  
µA  
IEBO  
VEB=-5V, IC=0  
Emitter cut-off current  
HFE  
DC current gain  
VCE=-2V, IC= -500mA  
IC=-1.5A, IB= -30mA  
VCE=-2V, IC=500mA  
VCE= -5V, IC=- 50mA  
VCB=-10V, IE=0,f=1MHZ  
100  
VCE(sat)  
VBE  
V
Collector-emitter saturation voltage  
Base-Emitter saturation votage  
Transition frequency  
80  
MHz  
pF  
f T  
50  
Coolletor Output Capacitance  
Cob  
CLASSIFICATION OF hFE  
Rank  
O
Y
WEJ ELECTRONIC CO.,LTD  
Range  
100-200  
160-320  
Marking  
HO  
HY  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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