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KTA1664 PDF预览

KTA1664

更新时间: 2024-11-18 12:54:39
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 127K
描述
TRANSISTOR (PNP)

KTA1664 数据手册

  
RoHS  
KTA1664  
SOT-89  
1. BASE  
KTA1664 TRANSISTOR (PNP)  
FEATURES  
Power dissipation  
2. COLLECTOR  
3. EMITTER  
1
PCM:  
0.5  
W (Tamb=25)  
2
3
Collector current  
ICM:  
-0.8  
-35  
A
V
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-1mA, IE=0  
MIN  
-35  
-30  
-5  
TYP  
MAX  
UNIT  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Ic=-10mA, IB=0  
IE=-1mA, IC=0  
V
µA  
µA  
VCB=-35V, IE=0  
-0.1  
-0.1  
320  
IEBO  
Emitter cut-off current  
VEB=-5V, IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=-1V, IC=-100mA  
100  
35  
DC current gain  
V
CE=-1V, IC=-700mA  
IC=-500mA, IB=-20mA  
CE=-1V, IC=-10mA  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
-0.7  
-0.8  
-0.5  
V
MHz  
pF  
Transition frequency  
fT  
VCE=-5V, IC=-10mA  
120  
19  
Cob  
Collector output capacitance  
V
CB=-10V, IE=0, f=1MHz  
CLASSIFICATION OF hFE(1)  
WEJ ELECTRONIC CO.,LTD  
Rank  
O
Y
Range  
Marking  
100-200  
RO  
160-320  
RY  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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