Datasheet > KTA1666

KTA1666

更新时间： 2024-11-22 02:59:11

品牌	Logo	应用领域
永而佳 - WINNERJOIN		开关晶体管
页数	文件大小	规格书
1页	128K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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KTA1666 数据手册

RoHS

KTA1666

SOT-89

1. ^BASE

KTA1666 TRANSISTOR (PNP)

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM:

0.5

W (Tamb=25℃)

Collector current

I_CM:

-2

Collector-base voltage

V_(BR)CBO

-50

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic=-1mA, I_E=0

Ic=-10mA, I_B=0

I_E=-1mA, I_C=0

µA

V_CB=-50V, I_E=0

-0.1

240

I_EBO

Emitter cut-off current

V_EB=-5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

V_CE=-2V, I_C=-500mA

DC current gain

V_CE=-2V, I_C=-1.5A

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-1A, I_B=-50mA

-0.5

-1.2

MHz

V_CE=-2V, I_C=-500mA

_CB=-10V, I_E=0, f=1MHz

120

C_ob

Collector output capacitance

Turn on Time

t_on

0.1

V_CC=30V, I_C=1A, I_B1=-I_B2=-0.05A

µs

Switching Time

Storage Time

t_stg

1.0

0.1

t_f

Fall Time

WEJ ELECTRONIC CO.,LTD

CLASSIFICATION OF h_FE(1)

Rank

Range

Marking

70-140

120-240

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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