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KTA1666_15 PDF预览

KTA1666_15

更新时间: 2024-11-22 01:05:31
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2页 1201K
描述
PNP Transistors

KTA1666_15 数据手册

 浏览型号KTA1666_15的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Transistors  
KTA1666  
1.70 0.1  
Features  
Small Flat Package  
Low Saturation Voltage  
0.42 0.1  
0.46 0.1  
Power Amplifier and Switching Application  
Comlementary to KTC4379  
1.Base  
2.Collector  
3.Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
-50  
-50  
-5  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
I
C
-2  
A
P
C
500  
250  
150  
mW  
/W  
RθJA  
T
J
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
V
V
V
CBO  
CEO  
EBO  
-50  
-50  
-5  
Ic= -1 mAI  
Ic= -10 mAI  
= -1 mAI  
CB= -50V , I  
EB= -5V , I =0  
=-1 A, I =-20mA (Note.1)  
BE(sat) IC=-1 A, IB=-20mA (Note.1)  
E=0  
B=0  
I
E
C=0  
I
CBO  
EBO  
V
V
E=0  
-0.1  
-0.1  
-0.5  
-1.2  
240  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
I
C
B
V
V
V
V
V
CE= -2V, I  
CE= -2V, I  
C
= -500mA  
= -1.5A  
70  
40  
DC current gain  
hFE  
C
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= -10V, I  
E= 0,f=1MHz  
40  
pF  
f
CE= -2V, I = -500mA  
C
120  
MHz  
Note.1: Pulse test: pulse width 300 uS, duty cycle2.0%.  
Classification of hfe(1)  
Type  
Range  
Marking  
KTA1666-O  
70-140  
WO  
KTA1666-Y  
120-240  
WY  
1
www.kexin.com.cn  

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