Datasheet > KTA1668

KTA1668

更新时间： 2024-01-03 17:32:33

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
3页	584K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

技术参数
数据手册

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KTA1668 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

KTA1668 数据手册

KTA1668

TRANSISTOR (PNP)

SOT-89

1. ^BASE

FEATURES

High voltage: V_CEO=-60V

High transistors frequency

2. ^COLLECTOR

3. ^EMITTER

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-80

-60

-5

-1

P_C

Collector power dissipation

Junction Temperature

Storage Temperature

500

150

-55-150

T_J

℃

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-80

-60

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-0.1mA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-0.1mA,I_C=0

I_CBO

I_EBO

V_CB=-50V,I_E=0

-0.1

200

μA

Emitter cut-off current

V_EB=-4V,I_C=0

h_FE1

V_CE=-2V,I_C=-50mA

V_CE=-2V,I_C=-1A

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_{B E(sat)}

f_T

I_C=-500mA,I_B=-50mA

V_CE=-10V,I_C=-50mA, f=100MHz

V_CB=-10V,I_E=0,f=1MHz

-0.7

-1.2

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

60-120

100-200

Range

Marking

JinYu

semiconductor

www.htsemi.com

Date:2011/05

12 3

中文翻译

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